Erratum: “Study of Novel Floating-Gate Oxide Semiconductor Memory Using Indium–Gallium–Zinc Oxide for Low-Power System-on-Panel Applications”

Abstract

The lifetime for the read operation, which is described in the second line from the bottom of the right column on page 094101-5, should be corrected as follows:Wrong: 277 h Correct: 13.8 h This correction does not affect on this paper, because the maximum usage time with a single charge is 10 h for battery-powered wireless mobile terminal applications such as smartphones, as described in Sect. 7. The authors apologize to the readers and the editors for our mistake.