Estimation of yield and decay kinetics of intraband luminescence in multiple-parabolic-branch-band model with account of phonons

Abstract

The emission spectrum of electron intraband luminescence was calculated for a dielectric crystal with conduction band consists of multiple parabolic branches. This shape of this spectrum adequately correspond to the CsI experimental spectra in the photon energy region ≥ 1.2 eV. The calculated total quantum yield of intraband luminescence of CsI is about 78 photons collected by the silicon photomultiplier per 1 MeV of deposited energy of ionizing radiation. This value is about two times higher than the experimental one, the difference is due to the simplification of the model. It was shown that characteristic times of intraband luminescence are about 1 ps.