Etching of two-dimensional materials

Sun, Haibin; Dong, Jichen; Liu, Fengning; Ding, Feng

doi:10.1016/j.mattod.2020.09.031

Cited by 63 publications

(44 citation statements)

References 106 publications

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“…This is in agreement with previous reports in which the zigzag edge of graphene was shown to be the slowest propagating edge both during growth and etching. [ 51,52,54,55 ]…”

Section: Resultsmentioning

confidence: 99%

“…This is in agreement with previous reports in which the zigzag edge of graphene was shown to be the slowest propagating edge both during growth and etching. [51,52,54,55] Figure 3c presents many etched GBs in graphene and more are shown in Figures S3 and S4, Supporting Information, from which we conclude that all the holes have a mirror symmetry with the symmetry axis of the GB. The holes can be classified graphene, from which we can see that most holes are along a straight line or ultra-long straight grain boundaries; only some of the GBs are etched, and there are two intact GBs (marked by red arrows).…”

Section: Selective Etching Of Graphene Twin Grain Boundariesmentioning

confidence: 86%

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Growth and Selective Etching of Twinned Graphene on Liquid Copper Surface

Liu

Dong

Kim

et al. 2021

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requires only two parameters: the lattice misalignment angle (θ) between the two single-crystalline grains and the alignment angle (φ) of the GB. It is well documented that GBs greatly affect the electronic, [1][2][3][4][5][6] mechanical, [7][8][9], and thermal properties [5,[10][11][12] of a 2D material, and therefore, GB engineering during 2D materials synthesis and processing is critical for applications. The study of TBs in 3D material is of great interest because of the dominance of TBs in 3D materials and their impact on the mechanical, thermal, and electronic properties of the materials. It is also demonstrated that TBs in 2D materials also have a great impact on their properties [4,10,13,14] but, in contrast, withThe ORCID identification number(s) for the author(s) of this article can be found under

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“…This is in agreement with previous reports in which the zigzag edge of graphene was shown to be the slowest propagating edge both during growth and etching. [ 51,52,54,55 ]…”

Section: Resultsmentioning

confidence: 99%

Section: Selective Etching Of Graphene Twin Grain Boundariesmentioning

confidence: 86%

Growth and Selective Etching of Twinned Graphene on Liquid Copper Surface

Liu

Dong

Kim

et al. 2021

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“…Etching is a reversible growth process that can be used to achieve the detailed information on growth kinetics [34] . As shown in Figure 4a, a hexagonal shape of GI on Cu surface is transmitted to be a near‐round one by etching in H 2 circumstances, which complied with the fast‐etching edges with ∼19° slanted angle from zigzag edges [35] .…”

Section: Resultsmentioning

confidence: 99%

Growth and Etching of the Grain Boundaries in Polygonal Graphene Islands

2021

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The grain boundary is an intrinsic defect within mono-and multi-layer polygonal graphene islands during the chemical vapor deposition growth process. It greatly influences their mechanical and electronic properties. However, the precise characterization and formation mechanism of grain boundaries still remain unclear. In this work, H 2 etching experiments show that a polygonal etched hole originates from the natural location of a grain boundary beyond the nucleation site in polygonal monolayer graphene. Furthermore, colorful Raman mapping provides a visualized method to explore the distribution of grain boundaries in polygonal bilayer graphene. Therefore, a deep understanding of the growth kinetics of mono-and bi-layer polygonal graphene was obtained through etching engineering combined with Raman spectroscopy.

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“…1c-d; We demonstrate that the shape of the graphene nanospear can be tuned by varying the experimental condition. By increasing the H 2 /CH 4 ratio, which has previously been shown to facilitate the etching of graphene and slow down the VSS growth rate 25,62 , we have successfully synthesized very sharp GNSs, comprising of a central GNR (Fig. 3a-b and Supplementary Fig.…”

Section: Mechanism Of the Graphene Nanospears And Nanoribbons Growthmentioning

confidence: 99%

“…Top-down methods of GNRs synthesis, such as unzipping carbon nanotubes [18][19][20][21] and etching graphene [22][23][24][25] , have proven challenging, as they commonly introduce defects and irregular edge structures at low yields with di culty in controlling GNR width. For the last decade 26 , bottom-up synthesis of GNRs from aromatic molecular frameworks has seen more success, despite often requiring costly ultra-high vacuum (UHV) conditions 27 , and those based in solution are di cult to transfer to insulating substrates and edge functionalization can diminish favorable optoelectronic properties 28,29 .…”

Section: Introductionmentioning

confidence: 99%

Bottom-up Growth of Graphene Nanospears and Nanoribbons

Sun

Liu

Zhang

et al. 2022

Preprint

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Graphene nanoribbons (GNRs) are considered one of the most promising materials for next generation electronics, however a reliable and controllable synthesis method is still lacking. Here, we report the CVD growth of GNRs on a copper surface and the corresponding mechanisms of growth. One-dimensional GNR growth is enabled by a vapor-liquid-solid (VLS) graphene growth guided by on-surface propagation of a liquid catalyst particle. Controlling the suppression of vapor-solid-solid (VSS) graphene growth along the width direction of the GNR by tuning the flow of H2 during growth gives rise to a spear head-shaped graphene that we term graphene nanospears (GNSs). The real-time visual and spatially resolved observations confirm the VSS growth of graphene can be fully suppressed and lead to GNR formation on Cu surface. These findings reveal key insight into the growth mechanism of graphene and open a door for achieving a facile and scalable method of synthesizing free standing GNRs.

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Etching of two-dimensional materials

Cited by 63 publications

References 106 publications

Growth and Selective Etching of Twinned Graphene on Liquid Copper Surface

Growth and Selective Etching of Twinned Graphene on Liquid Copper Surface

Growth and Etching of the Grain Boundaries in Polygonal Graphene Islands

Bottom-up Growth of Graphene Nanospears and Nanoribbons

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