Optical Microlithography XXI 2008
DOI: 10.1117/12.772766
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Evaluating the accuracy of a calibrated rigorous physical resist model under various process and illumination conditions

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Cited by 7 publications
(7 citation statements)
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“…The overall RMSE of 1.6 nm for the stochastic model compares favorably with the error level observed with conventional continuum models [4][5][6][7], particularly if it is considered that SRM calibration methods are in their infancy. Figure 1 …”
Section: Stochastic Resist Model Calibrationmentioning
confidence: 83%
“…The overall RMSE of 1.6 nm for the stochastic model compares favorably with the error level observed with conventional continuum models [4][5][6][7], particularly if it is considered that SRM calibration methods are in their infancy. Figure 1 …”
Section: Stochastic Resist Model Calibrationmentioning
confidence: 83%
“…Different imaging characteristics are observed due to the varying pitch-to-CD ratio values. Dense and isolated line/space patterns are frequently used for resist modeling 27 , 28 , 30 32 and calibration 33 38 due to the significant differences in imaging characteristics between them. Consequently, the EXP-method 1 selects the patterns with the smallest and largest pitch-to-CD ratios as the critical patterns.…”
Section: Selection Results Of Critical Patterns Based On Different Me...mentioning
confidence: 99%
“…The patterns considered in the establishment and calibration process of resist models are line/space patterns with different CDs and pitches typically 33 37 , 43 47 And other kinds will be used in verification. This methodology can bring good results normally.…”
Section: Discussionmentioning
confidence: 99%
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