Evaluating the effect of dislocation on the photovoltaic performance of metamorphic tandem solar cells

Zhang, Han; Chen, Nuofu; Wang, Yu; Zhang, Xingwang; Yin, Zhigang; Shi, Heng; Wang, YanSuo; Huang, TianMao; Bai, Yiming; Fu, Zheng‐Wen

doi:10.1007/s11431-010-4015-3

Cited by 10 publications

(5 citation statements)

References 28 publications

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“…Recently, the impact of minority carrier lifetime on cell performance has been investigated for InGaN cells on Si [15]. The effect of dislocations in metamorphic III-V tandem cells has also been investigated but without incorporation of a substrate [16]. There has not been significant work done on the modeling-assisted design of metamorphic tandem solar cells incorporating the impact of TDD.…”

mentioning

confidence: 99%

Impact of Threading Dislocations on the Design of GaAs and InGaP/GaAs Solar Cells on Si Using Finite Element Analysis

Jain

Hudait

2013

IEEE J. Photovoltaics

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We investigate the impact of threading dislocation densities on the photovoltaic performance of single-junction (1J) n + /p GaAs and dual-junction (2J) n + /p InGaP/GaAs solar cells on Si substrate. Using our calibrated model, simulation predicts an efficiency of greater than 23% for a 1J GaAs cell on Si at AM1.5G spectrum at a threading dislocation density of 10 6 cm −2 . The design of a metamorphic 2J InGaP/GaAs solar cell on Si was optimized by tailoring the 2J cell structure on Si to achieve current matching between the subcells, taking into account a threading dislocation density of 10 6 cm −2 . Finally, we present a novel and an optimized 2J InGaP/GaAs solar cell design on Si at a threading dislocation density of 10 6 cm −2 , which exhibited a theoretical conversion efficiency of greater than 29% at AM1.5G spectrum, indicating a path for viable III-V multijunction cell technology on Si.

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mentioning

confidence: 99%

Impact of Threading Dislocations on the Design of GaAs and InGaP/GaAs Solar Cells on Si Using Finite Element Analysis

Jain

Hudait

2013

IEEE J. Photovoltaics

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“…After Sunlight is incident on the surface of the solar cells, it decays along the thickness of the material. When series and parallel resistance losses and reflections are neglected, the short circuit current density J sci (i = 1, 2 represents the top and bottom cell parameters, respectively) can be described as equation (1) [24]:…”

Section: Methodsmentioning

confidence: 99%

Photovoltaic performance of lattice-matched gallium indium arsenide/germanium stannide dual-junction cell

Cui

et al. 2023

Mater. Res. Express

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Based on the photovoltaic properties and tandem solar cells theory, Gallium Indium Arsenide/Germanium Stannide (GaInAs/GeSn)-based double-junction (DJ) solar cells have been numerically simulated for the first time. In this study, we explore the band gap combination under lattice matching and obtain the content of In/Sn at optimal efficiency, which is expressed as Ga0.84In0.16As/Ge0.93Sn0.07 DJ solar cell (1.20/0.58 eV). Afterward, it is optimized in terms of variation in the doping contents and active layer thickness. To take full advantage of the electron mobility of the material, the optimal 'inverted doping profile' concentration Na(d) is 1.5(5)/5(20)×1018 cm-3. In addition, the reasonable p(n) layer thickness could be comprised of 0.2-0.8(0.2-1)/0.5-3(1-4) μm of the DJ solar cells with less material consumption. When the p(n) layer thickness is 0.30(0.25)/0.9(1.35) μm, the tandem device can achieve an optimal efficiency of 31.00% with 28.98 mA/cm2 (JSC), 1.25 V (VOC) and 85% (FF). This study highlights that GeSn materials have the potential to combine with III-V materials to form low-cost and high-efficiency tandem devices.

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“…Owing to the energy crisis and air pollution, making use of solar energy has attracted more and more attention [1][2][3][4].…”

Section: Citationmentioning

confidence: 99%

“…Owing to the energy crisis and air pollution, making use of solar energy has attracted more and more attention [1][2][3][4]. The solar cell with ultra-small textured surface also known as nanowires (NWs) solar cell has received great attention recently [5,6].…”

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confidence: 99%

The analysis of electrical performances of nanowires silicon solar cells

Jia

Ding

et al. 2011

Sci. China Technol. Sci.

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A theoretical model of silicon solar cells with ultra-small textured surface has been established based on depletion approximation and drift diffusion theory. The ultra-small textured surface achieves the low reflectance by multiple reflections among the silicon nanowires (NWs). The electrical performances of the solar cells, including open circuit voltage (V oc ), short circuit current (I sc ) and conversion efficiency (  ), are analyzed by the theoretical model. The results show that the low reflectance is not the only pursuit in manufacturing the Si NWs solar cells. Other factors including optimizing the surface passivation, improving the silicon wafers quality and designing the proper nanowire length should be considered together with NWs structure. ultra-small textured surface, solar cell, electrical properties Citation:Li H F, Jia R, Ding W C, et al. The analysis of electrical performances of nanowires silicon solar cells.Owing to the energy crisis and air pollution, making use of solar energy has attracted more and more attention [1][2][3][4].The solar cell with ultra-small textured surface also known as nanowires (NWs) solar cell has received great attention recently [5,6]. Based on the relationship between the built-in electric field direction and the incident light direction, the NWs solar cells can be divided into two categories: planar pn junction structure [7] in which the built-in electric field direction is parallel to the incident light direction, as shown in Figures 1(b) and (d); the radial pn junction structure [8] in which the two directions are perpendicular. The NWs solar cell with planar pn junction structure (for convenience, in the following "NWs solar cell with planar pn junction structure" is referred to as "NWs solar cell") has many specialties such as low reflectance, low production cost and compatibility with existing solar cell production process. According to the released reports, the reflectance of the NWs solar cell can reach 3% to 5% [9], lower 30% to 40% than that of the conventional solar cells. However, most of the reports are dedicated to the low reflectance but without concerning the performance of the NWs solar cell [10].In this paper, a theoretical model is established. The electrical properties including V oc , I sc , and  are analyzed by this model. Model foundationTo simplify the calculation, the model makes the following assumptions. The first assumption is the depletion approximation: the electric field vanishes at a fixed distance from either side of the junction, leaving quasi-neutral p and n type regions. Within these quasi-neutral regions, the majority carriers have their equilibrium value and only the variation in the minority carrier density determines the current. The second one is that the recombination rate in the neutral region is approximately linear with the minority carrier density.

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Evaluating the effect of dislocation on the photovoltaic performance of metamorphic tandem solar cells

Cited by 10 publications

References 28 publications

Impact of Threading Dislocations on the Design of GaAs and InGaP/GaAs Solar Cells on Si Using Finite Element Analysis

Impact of Threading Dislocations on the Design of GaAs and InGaP/GaAs Solar Cells on Si Using Finite Element Analysis

Photovoltaic performance of lattice-matched gallium indium arsenide/germanium stannide dual-junction cell

The analysis of electrical performances of nanowires silicon solar cells

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