Evaluation of calixarene—derivatives as high-resolution negative tone electron-beam resists

Abstract

We present a systematic evaluation of calixarene derivatives as high-resolution negative tone resists for electron-beam lithography with a focus on their sensitivities. We studied the effect of a modification of the calixarene molecules to trimethysilyl ethers as well as the effect of an introduction of an allyl group and showed that the introduction of double bonds into the molecules can improve the sensitivity of the resists while their position does not seem to be important. The high-resolution capability of tetraallylcalix[4]arene was confirmed by fabricating an 18 nm dot array.

Metrology for electron-beam lithography and resist contrast at the sub-10 nm scale

“…5 Achieving the highest possible resolution of EBL is important for these applications. Recent progress has been made in ultrahigh-resolution EBL with the emergence of new tools, 6 resists, [7][8][9][10] and processes. [11][12][13][14] For example, sub-5 nm half-pitch features have been reported using a Raith150-TWO EBL system with a saltydevelopment process using hydrogen silsesquioxane ͑HSQ͒ resist.…”

Synthesis, characterization, and investigation of a conformationally immobile calix[6]arene as a negative electron beam resist

“…3 Extensive purification of the calixarene resist also resulted in improved contrast for both calix͓6͔arene and calix͓7͔arene compared to the less-purified calix͓6͔arene results. One of the earliest experiments 1 used hexaacetate p-methylcalix͓6͔arene ͑abbre-a͒ Electronic mail: spencer@txstate.edu viated as MC6AOAc by those authors͒ to pattern fine lines to 10 nm.…”

“…[1][2][3] They have demonstrated very high resolution, having patterned features down to 10 nm or less. [1][2][3] They have demonstrated very high resolution, having patterned features down to 10 nm or less.…”

Preparation and properties of calix[4]arene-based epoxy resins

“…Thus it seems promising to further enhance the sensitivity of calixarene derivatives by applying various techniques, which are generally used to reduce the required dose of commonly used novolak resin. [15][16][17][18][19] Up to now, this method has not been applied to the non polymeric class of calixarenes. In the microelectronic process, the smallest obtainable structure size as well as the line edge roughness is strongly influenced by the size of the typical novolak based polymeric resist molecules.…”