Evaluation of crystal structure and photoluminescence for ZnTe epilayers grown on a 2^o off‐oriented GaAs (100) substrate

Abstract

PACS 68. 78.55.Et, High quality zincblende ZnTe epitaxial layers have been grown on a tilted GaAs (100) substrate by hotwall epitaxy. The surface morphology and the crystallinity were investigated in terms of their growth temperature dependence while the optical properties were analyzed by photoluminescence spectroscopy (PL). It was found that the orientation of the epitaxial layer was inclined to the substrate crystal plane. The optimum growth condition was found to be a growth temperature of 470 °C. The ground state and excited states of free exciton emissions were clearly observed at 10 K PL.