Evaluation of PZT capacitors with Pt/SrRuO<sub>3</sub> electrodes for feram

Cross, Jeffrey S.; Fujiki, Mitsushi; Tsukada, Masaru; Matsuura, Katsuyoshi; Otani, Seigen; Tomotani, Miki; Kataoka, Yuki; Kotaka, Yasutoshi; Goto, Yasuyuki

doi:10.1080/10584589908210177

Cited by 28 publications

(15 citation statements)

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“…This is a rather unexpected result as it is conventionally thought that Ru, rather than Sr, is more susceptible to transport across the interfaces, as RuO 2 is highly volatile [25,26]. However, earlier Cross et al [27,28] have published SIMS and EDS data for La-doped PZT (PLZT) on SRO that also finds Sr diffusion from SRO into the PLZT layer. They proposed that Sr diffusion is related to the excess of Pb, with such a diffusion being responsible for the high leakage current in their capacitors.…”

Section: Methodsmentioning

confidence: 52%

Structural defects and local chemistry across ferroelectric–electrode interfaces in epitaxial heterostructures

et al. 2009

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We present a detailed investigation of the chemistry at the growth interface between the bottom electrode and ferroelectric film in (001)-oriented epitaxial ferroelectric thin-film heterostructures. Three different ferroelectric systems, namely PbZr 0.2 Ti 0.8 O 3 , PbZr 0.52 Ti 0.48 O 3 , and BaTiO 3 deposited on SrRuO 3 /SrTiO 3 , were investigated to compare and contrast the role of lattice mismatch versus the volatility of the deposited cation species. A combination of transmission electron microscopy-based imaging and spectroscopy reveals distinct correlations among the ferroelectric thin-film composition, the deposition process, and chemical gradients observed across the ferroelectric-electrode interface. Sr diffusion from the electrode into the ferroelectric film was found to be dominant in PbZr 0.2 Ti 0.8 O 3 /SrRuO 3 /SrTiO 3 thin films. Conversely, Pb diffusion was found to be prevalent in PbZr 0.52 Ti 0.48 O 3 /SrRuO 3 /SrTiO 3 thin films. The BaTiO 3 / SrRuO 3 /SrTiO 3 heterostructure was found to have atomically sharp interfaces with no signature of any interdiffusion. We show that controlling the volatility of the cation species is as crucial as lattice mismatch in the fabrication of defect-free ferroelectric thin-film devices.

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Section: Methodsmentioning

confidence: 52%

Structural defects and local chemistry across ferroelectric–electrode interfaces in epitaxial heterostructures

et al. 2009

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“…On the other hand, we cannot rule out the possible existence of SrPbO 3 , suggested by Cross et al,13,27 at grain boundaries due to the diffusion of the electrode material 28. FIG.…”

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confidence: 68%

Synthesis and Properties of Lead Zirconate Titanate Thin Films Via Metalorganic Chemical Vapor Deposition

2002

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Ferroelectric PZT thin films were deposited on Pt and SrRuO 3 substrates in a cold-wall reactor, using the Pb(C 2 H 5 ) 4 /Zr(OBu) 4 /Ti(OPr i ) 4 /O 2 reaction system. In comparison with Pt substrate, the growth rate of lead zirconate titanate (PZT) thin film was higher on SrRuO 3 . Lead content of the thin film deposited on either substrate at low temperatures (723-863 K) was much more temperature dependent than the other two metal contents. The strong temperature dependence originated from the high activation energy in the initial decomposition of Pb(C 2 H 5 ) 4 vapor, which was 54 kcal/mol. The surface reaction constant of lead precursor had much lower temperature dependence. The activation energy of surface reaction for PbO, estimated from deposition in a mini-chamber, was 6 kcal/mol on Pt and 9 kcal/mol on the SrRuO 3 substrate. Therefore, the incorporation path of component oxide PbO, whose apparent activation energy was 31 kcal/mol on Pt and 29 kcal/mol on SrRuO 3 , essentially involved considerable gas-phase reaction. The PZT (50/50) thin film on SrRuO 3 bottom electrode possessed a lower coercive field and a smaller remnant polarization than that on Pt. The PZT capacitor on SrRuO 3 was also less vulnerable to polarization fatigue.Pb(Zr,Ti)O 3 thin films were deposited on SrRuO 3 /Si(001) and Pt/Ti/SiO 2 /Si(001) substrates in a barrel-type coldwall reactor under oxidizing atmosphere, using tetraethyl

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“…1 Figure 6 presents the leakage current density evolution across the process window. 4,21 It must be noted that the leakage of the evaporated Pt was fluctuated and had a large asymmetry, even though the slight increase in the leakage current density across the process window was confirmed as the same as those of Pt and SrRuO 3 sputtered electrodes. Figure 6 shows a slight increase in the leakage current density across the process window and confirms that the use of SrRuO 3 top electrode has the tendency to slightly increase the leakage current density.…”

Section: Electric Properties Throughout the Process Windowmentioning

confidence: 84%

“…[1][2][3][4][5][6][7][8] In order to follow the complementary metal-oxide semiconductor scaling trends, drastic reductions in the ferroelectric capacitor dimensions are needed. [1][2][3][4][5][6][7][8] In order to follow the complementary metal-oxide semiconductor scaling trends, drastic reductions in the ferroelectric capacitor dimensions are needed.…”

Section: Introductionmentioning

confidence: 99%

(111)-oriented Pb(Zr,Ti)O3 films deposited on SrRuO3∕Pt electrodes: Reproducible preparation by metal organic chemical vapor deposition, top electrode influence, and reliability

Menou

Funakubo

2007

Journal of Applied Physics

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Articles you may be interested inSome unusual behavior of dielectric properties of SrTiO3 metal organic chemical vapor deposition grown thin films J. Appl. Phys. 116, 094101 (2014); 10.1063/1.4894811 Voltage induced acoustic resonance in metal organic chemical vapor deposition SrTiO3 thin film J. Vac. Sci. Technol. B 30, 061202 (2012); 10.1116/1.4757129 Strain-relaxed structure in (001)/(100)-oriented epitaxial Pb ( Zr , Ti ) O 3 films grown on (100) SrTiO 3 substrates by metal organic chemical vapor deposition J. Appl. Phys. 105, 014107 (2009); 10.1063/1.3056138 1 V saturated Pb ( Zr , Ti ) O 3 films with (111) orientation using lattice-matched ( 111 ) SrRuO 3 / ( 111 ) Pt bottom electrode prepared by pulsed metal organic chemical vapor deposition͑111͒-textured Pb͑Zr 0.4 Ti 0.6 ͒O 3 films ͑thickness of ϳ120 nm͒ were deposited on ͑111͒-oriented SrRuO 3 bottom electrodes by pulse metal organic chemical vapor deposition ͑MOCVD͒. PZT single phase was evidenced over a large range of Pb precursor input rate into the MOCVD chamber. In this process window, the good control of the ͑111͒ texture of PZT films was confirmed. It is shown that the control of both the composition and orientation of PZT films leads to reproducible electric properties ͑P r , V c , resistance to fatigue͒ across the process window. Furthermore, the impact of the top electrode chemical nature, elaboration process, and annealing process upon the electric properties was studied systematically.

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Evaluation of PZT capacitors with Pt/SrRuO₃ electrodes for feram

Cited by 28 publications

References 10 publications

Structural defects and local chemistry across ferroelectric–electrode interfaces in epitaxial heterostructures

Structural defects and local chemistry across ferroelectric–electrode interfaces in epitaxial heterostructures

Synthesis and Properties of Lead Zirconate Titanate Thin Films Via Metalorganic Chemical Vapor Deposition

(111)-oriented Pb(Zr,Ti)O3 films deposited on SrRuO3∕Pt electrodes: Reproducible preparation by metal organic chemical vapor deposition, top electrode influence, and reliability

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Evaluation of PZT capacitors with Pt/SrRuO3 electrodes for feram

Cited by 28 publications

References 10 publications

Structural defects and local chemistry across ferroelectric–electrode interfaces in epitaxial heterostructures

Structural defects and local chemistry across ferroelectric–electrode interfaces in epitaxial heterostructures

Synthesis and Properties of Lead Zirconate Titanate Thin Films Via Metalorganic Chemical Vapor Deposition

(111)-oriented Pb(Zr,Ti)O3 films deposited on SrRuO3∕Pt electrodes: Reproducible preparation by metal organic chemical vapor deposition, top electrode influence, and reliability

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Evaluation of PZT capacitors with Pt/SrRuO₃ electrodes for feram