Evaluation system for power loss identification of perspective wide bandgap semiconductor transistors

Pipiska, Michal; Sojka, Peter; Šedo, Jozef

doi:10.1109/epe.2019.8777998

Cited by 2 publications

(1 citation statement)

References 9 publications

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“…One of the ways, how to effectively investigate MOSFET substitution by its GaN replacement, is proper analysis of switching losses. This can be done by precise experimental measurement, while for given transistor type, a special measuring circuit shall be developed to provide valuable results [7]- [10]. This process can be substituted by simulation analysis if manufacturer provides models with high level of accuracy and validity of the results [9].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of GaN Power Transistor Switching Performance on Characteristics of Bidirectional DC-DC Converter

Frivaldský

Morgos

Zelnik

2020

ELEKTRON ELEKTROTECH

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The paper deals with the experimental analysis of the switching performance of selected GaN (Galium Nitride) power transistor, whose use is then expected in bidirectional buck/boost DC-DC converter. The switching performance was evaluated through highly accurate and verified simulation models of GS61008P transistor from GaN systems. Experiments have been provided for a wide spectrum of switching frequency and load current in order to verify transistor performance. Then, based on the results, it was expected that high-frequency operation (above 500 kHz) should not distort the efficiency performance of the designed bidirectional converter. This was confirmed after laboratory measurements of the efficiency of the proposed DC-DC converter, while operation under very high switching frequency was more effective compared to low-frequency operation. Over 95 % of efficiency was achieved for both buck and boost mode (125 W), even switching frequency was above 500 kHz.

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Section: Introductionmentioning

confidence: 99%