Evidence by Raman scattering on In1−xGaxAsyP1−y of the two-mode behaviour of In1−xGaxP

Jusserand, B.; Slempkès, S.

doi:10.1016/0038-1098(84)90570-2

Cited by 89 publications

(32 citation statements)

References 4 publications

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“…Knowing about the relation between LPP modes and free carrier concentration Raman spectroscopy can be used as a tool for sample characterization, in particular in inhomogeneous microstructures. 3.5 Al x Ga 1-x N: dependence of the phonon energies on the Al-content The phonon frequencies of alloys depend on their stoichiometry in a characteristic way [49][50][51]: phonons exhibit one-or multimode behavior. In the case of one-mode behavior the number of modes does not change with stoichiometry and their frequencies depend approximately linearly on the composition of the alloy.…”

Section: Coupled Lo-phonon Plasmon Modes (Lpp Modes)mentioning

confidence: 99%

Lattice dynamics in GaN and AlN probed with first‐ and second‐order Raman spectroscopy

Haboeck

Siegle

Hoffmann

et al. 2003

phys. stat. sol. (c)

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We present a selection of our contributions to basic research on the lattice dynamical properties of group-III nitrides and their alloys. We used first-order Raman scattering to determine the zone-center phonons and their dependence on structural attributes such as stress, chemical composition, impurities, and doping. Results on the angular dispersion of the polar modes, strain distribution, coupled LO-phonon plasmon modes, multi-mode behavior in Al x Ga 1-x N, and the quantitative determination of the phase purity of cubic and hexagonal GaN are shown. Second-order Raman-scattering experiments on GaN and AlN provide information on the vibrational states throughout the entire Brillouin zone. Based on a comparison of experimental data and calculated phonon-dispersion curves we assigned the observed structures to particular phonon branches and points in the Brillouin zone. We also discuss the behavior of the optical modes under large hydrostatic pressure. 1 Introduction During the last decade group-III nitrides have been an object of increasing research because of their interesting physical properties such as an adjustable band gap (1.9 eV to 6.2 eV) by varying the composition of the alloys [1] and application as basic materials for optoelectronic devices working in the blue and ultraviolet spectral region [2][3][4]. In particular GaN and AlN can withstand high temperatures and have large piezoelectric constants which makes them suitable for applications in highfrequency devices, sensors and low-dimensional structures [5,6].Although basic information about group-III nitrides e.g. crystal-and band structure have been available for a decade several details still remained unclear. In the following review of our work we present results of first-and second-order Raman investigations on various GaN, AlN, and Al x Ga 1-x N samples and point out some remarkable details of the structural and optical properties of these materials.

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Section: Coupled Lo-phonon Plasmon Modes (Lpp Modes)mentioning

confidence: 99%

Lattice dynamics in GaN and AlN probed with first‐ and second‐order Raman spectroscopy

Haboeck

Siegle

Hoffmann

et al. 2003

phys. stat. sol. (c)

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“…(ii) If the parent TO frequencies are close enough, the A-B and A-C TO branches merge into an apparent 2-bond→1-mode (mixed-mode) behavior with a unique (A-B, A-C)-mixed TO mode that has quasi-stable intensity, and shifts regularly between the parent TO modes. There seems to exist a sort of intermediate-type behavior, the so-called (iii) modified-two-mode behavior, 6 with two (A-B, A-C)-mixed TO modes, i.e. a dominant one of type (ii), plus a minor one joining the impurity modes that does not allow to fully discard the type (i).…”

Section: Introductionmentioning

confidence: 99%

Unification of the phonon mode behavior in semiconductor alloys: Theory andab initiocalculations

Pagès¹,

Postnikov²,

Kassem³

et al. 2008

Phys. Rev. B

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We demonstrate how to overcome serious problems in understanding and classification of vibration spectra in semiconductor alloys, following from traditional use of the virtual crystal approximation (VCA). We show that such different systems as InGaAs (1-bond→1-mode behavior), InGaP (modified 2-mode) and ZnTeSe (2-bond→1-mode) obey in fact the same phonon mode behavior -hence probably a universal one -of a percolation-type (1-bond→2-mode). The change of paradigm from the 'VCA insight' (an averaged microscopic one) to the 'percolation insight' (a mesoscopic one) offers a promising link towards the understanding of alloy disorder. The discussion is supported by ab initio simulation of the phonon density of states at the zone-center of representative supercells at intermediary composition (ZnTeSe) and at the impurity-dilute limits (all systems). In particular, we propose a simple ab initio 'protocol' to estimate the basic input parameters of our semi-empirical 'percolation' model for the calculation of the 1-bond→2-mode vibration spectra of zincblende alloys. With this, the model turns self-sufficient.

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“…2 of [6]. Jusserand et al [8] observed the strong emergence of the Ga-P Raman LO line on the blue side of the dominant In-P LO line at very low Ga content (~0.1%), which was attributed to some coupling between the two close LO modes. On this basis the InP:Ga impurity mode was identified as a distinct mode slightly above (~2 cm -1 ) the TO-LO band of InP.…”

Section: (Ga In)asmentioning

confidence: 98%

“…However, while the InP:Ga mode remains above the InP TO-LO band, i.e. at ~347 cm -1 [8], the GaP:In mode was identified within the GaP TO-LO band, i.e. at ~390 cm -1 [9].…”

Section: Introductionmentioning

confidence: 97%

Percolation model for long wave phonons in random zincblende alloys: from II‐VI's to III‐V's

Chafi¹,

Pagès²,

Fristot³

et al. 2006

Phys. Status Solidi (c)

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We propose a simplified version of our 1-bond→2-mode percolation model initially developed for the q ~ 0 phonon properties of the stiff Be-VI bond in (Zn,Be)-chalcogenides, which open the class of random mixed crystals with contrast in the bond stiffness. The simplified version applies to the 'usual' alloys, i.e. made of soft-like bonds only. It is derived from detailed comparison of the Raman responses from the stiff Be-Te bond and the soft Zn-Te one in the pioneer (Zn,Be)Te system. The simplified version is eventually tested on (Ga,In)As whose 1-bond→2-mode behavior in the Ga-As range of the Raman spectra remains a much debated issue. Further, we lay the foundations for a comprehensive re-examination of the puzzling phonon behavior' of the similar (Ga,In)P alloy, by analogy with (Ga,In)As.

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Evidence by Raman scattering on In1−xGaxAsyP1−y of the two-mode behaviour of In1−xGaxP

Cited by 89 publications

References 4 publications

Lattice dynamics in GaN and AlN probed with first‐ and second‐order Raman spectroscopy

Lattice dynamics in GaN and AlN probed with first‐ and second‐order Raman spectroscopy

Unification of the phonon mode behavior in semiconductor alloys: Theory andab initiocalculations

Percolation model for long wave phonons in random zincblende alloys: from II‐VI's to III‐V's

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