Evolution of spin coherence dynamics and g factor with electron excess energy in bulk intrinsic GaAs

Lai, Tianshu; Teng, Lihua; Jiao, Zhongxing; Xu, Huailiang; Liang, Lei; Wen, Jin; Wang, Lin

doi:10.1063/1.2763978

Cited by 25 publications

(25 citation statements)

References 15 publications

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“…The decrease of spin lifetime in the degenerate regime is understood as follows: in the degenerate regime 42 The thermalization effect was shown to be crucial in a recent fully microscopic calculation [564]. This is also supported by the experimental results that the spin lifetime was observed to decrease with the photon energy of the pump laser [543,565,566]. the ionized-impurity scattering time and longitudinal-optical-phonon scattering time vary slowly with density, whereas ε 3 k ∼ n 2 D increases with density.…”

Section: Electron Spin Relaxation In N-type Bulk Iii-v and Ii-vi Semimentioning

confidence: 59%

Spin dynamics in semiconductors

2010

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This article reviews the current status of spin dynamics in semiconductors which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics. The primary focus is the theoretical and experimental developments of spin relaxation and dephasing in both spin precession in time domain and spin diffusion and transport in spacial domain. A fully microscopic many-body investigation on spin dynamics based on the kinetic spin Bloch equation approach is reviewed comprehensively.Comment: a review article with 193 pages and 1103 references. To be published in Physics Reports

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Section: Electron Spin Relaxation In N-type Bulk Iii-v and Ii-vi Semimentioning

confidence: 59%

Spin dynamics in semiconductors

2010

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“…To clarify quantum confinement effects on the electron spin g-factor in AlGaAs/GaAs and CdTe/CdMgTe quantum wells (QWs), many experimental and theoretical studies were performed at low temperature [3,4,7,8]. From an application viewpoint, it is necessary to clarify the spin properties not only at low temperature but also at room temperature.…”

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confidence: 99%

Electron spin precession observed in bulk CdTe at room temperature

Ito

Shichi

Okami

et al. 2008

Phys. Status Solidi (c)

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We report on spin precession observed in CdTe and GaAs bulks at room temperature by means of time‐resolved Kerr rotation measurements under a high magnetic field. Electron g‐factor in CdTe obtained from the spin precession measurements was significantly different from that in GaAs having similar band gap because of stronger spin‐orbital interaction in CdTe. Theoretical analysis on temperature dependence of the g‐factor was also conducted, based on 3‐band k·p perturbation theory, to estimate the effects of remote bands other than the 3 bands. The dependence of the electron g‐factor on temperature was numerically reproduced in low temperature region by considering thermal distribution of electrons. The effects of the remote bands are discussed in relation to the discrepancy between experiments and theoretical analysis in higher temperature region. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…This interesting behavior was once observed in bulk GaAs by the technique of absorption quantum-beat spectroscopy. 27 In the case of bulk GaAs whose hh and lh subbands are degenerated at the top of the valence band, the separation of the hh-electron and lh-electron transitions are rather complicated in comparison with our sample with nondegenerated subbands. Finally, we would like to bring into attention the widths of the Gaussian functions in Fig.…”

Section: Resultsmentioning

confidence: 76%

Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation

Ning¹,

Xu²,

Ruan³

et al. 2011

Journal of Applied Physics

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Electronic band structures and spin states of the InAs/GaAs quantum dots (QDs) induced by the wetting-layer fluctuation were investigated by employing the technique of time-resolved Kerr rotation (TRKR) with and without magnetic field. Sign change of the Kerr rotation signal was unambiguously observed when only the wavelength of the pump/probe light was scanned. By carefully examining the dependence of TRKR signal on the excitation wavelength and magnetic field as well as photoluminescence and reflectance spectra, the physical origin causing the sign change of the Kerr signal is uncovered. It is due to the resonant excitations of electrons with opposite spin orientations at heavy-(hh) and light-hole (lh) subbands, respectively, since there is a large enough energy separation in QDs for the excitation laser pulses. This measurement also leads to a precise determination of the energy separation between the hh and lh subbands near k ¼ 0 point in the dots.

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Evolution of spin coherence dynamics and g factor with electron excess energy in bulk intrinsic GaAs

Abstract: Optical control over electron g factor and spin decoherence in ( In , Ga ) As ∕ Ga As quantum dots

Cited by 25 publications

References 15 publications

Spin dynamics in semiconductors

Spin dynamics in semiconductors

Electron spin precession observed in bulk CdTe at room temperature

Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation

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