Examination of Maskless Etching Technique Using a Localized Surface Discharge Plasma

Abstract

A maskless etching technique which is useful for solar cell manufacturing and microelectronics was examined using the localized surface discharge plasma at atmospheric pressure. Etchings were carried out on a crystalline silicon (Si) substrate and a silicon nitride (SiN) film coated on a Si substrate. Two-and three-dimensional etching profiles were investigated. Based on the results, etching rates and an etching mechanism were discussed. 

Etching Characteristics of SixNy Film on Textured Single Crystalline Silicon Surface Using Ar/CF4 and He/CF4 Surface-Discharge Plasma

“…Herein, we propose the fabrication of antireflection films with etched electrode grooves on single crystalline silicon solar-cell substrates using surface-discharge plasma. The proposed technique is very economical because nonequilibrium plasma can be generated under normal atmospheric pressure without any masking material [4][5][6][7][8].…”