Examination of silicon material properties using THz time-domain spectroscopy

Abstract

High-resistivity silicon is a very popular choice for substrate material when examining e.g. various thin films, biological samples etc. using THz radiation. This paper provides an overview of research on its THz properties, examines various practical issues appearing when determining its properties and reports results on complex index of refraction, permittivity and conductivity, obtained using modern instrumentation. Potential problems related to water absorption are highlighted. Various Drude models and parameters are also presented and discussed.