Journal of Crystal Growth
 2008
DOI: 10.1016/j.jcrysgro.2008.08.061
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Excitonic absorption in GaN layers of GaN-based UV Schottky-type light-emitting diodes grown by metal–organic vapor phase epitaxy

S. Komiyama
1
,
Noguchi Kazuyuki
2
,
Shota Suzuki
3
et al.
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