Excitonic Effects in the Optical Properties of Scandium and Hafnium MXene Semiconductors from First‐Principles Calculations

Abstract

The present study uses a full‐potential linearized augmented plane wave method and Bethe–Salpeter equation to calculate and interpret the optical properties of Sc2CT2 (T = O, F, and OH) and Hf2CO2 MXene semiconductors, including real and imaginary parts of the dielectric function along with energy loss function. Excitonic structures are observed below calculated bandgaps in these compounds. Sc2CO2 and Sc2CF2 have three excitonic features, whereas Sc2C(OH)2 and Hf2CO2 show two. As compared to other compounds, Sc2CO2 has a larger exciton binding energy. The energy loss functions display spectral features near the bandgap regions due to the excitonic structures in the imaginary part of the dielectric function.