Experimental analysis of temperature dependence in 1.3-μm AlGaInAs-InP strained MQW lasers

Higashi, T.; Sweeney, S. J.; Phillips, A.F.; Adams, A.R.; O’Reilly, Eoin P.; Uchida, T.; Fujii, T.

doi:10.1109/2944.788399

Cited by 52 publications

(44 citation statements)

References 30 publications

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“…For example, an exponent analysis of electroluminescence (EL) measurements is commonly used when characterising a light emitting diode or laser device to determine the dominant recombination mechanism at different temperatures. 40,41 We expect that the failure of Eq. (4) will need to be considered when using such an approach.…”

Section: Discussionmentioning

confidence: 99%

Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures

Hodgson

Young

Kamarudin

et al. 2013

Journal of Applied Physics

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We have studied the ensemble photoluminescence (PL) of 11 GaSb/GaAs quantum dot/ring (QD/QR) samples over !5 orders of magnitude of laser power. All samples exhibit a blueshift of PL energy, DE, with increasing excitation power, as expected for type-II structures. It is often assumed that this blueshift is due to band-bending at the type-II interface. However, for a sample where charge-state sub-peaks are observed within the PL emission, it is unequivocally shown that the blueshift due to capacitive charging is an order of magnitude larger than the band bending contribution. Moreover, the size of the blueshift and its linear dependence on occupancy predicted by a simple capacitive model are faithfully replicated in the data. In contrast, when QD/QR emission intensity, I, is used to infer QD/QR occupancy, n, via the bimolecular recombination approximation (I / n 2 ), exponents, x, in DE / I x are consistently lower than expected, and strongly sample dependent. We conclude that the exponent x cannot be used to differentiate between capacitive charging and band bending as the origin of the blueshift in type-II QD/QRs, because the bimolecular recombination is not applicable to type-II QD/QRs. V C 2013 AIP Publishing LLC.

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Section: Discussionmentioning

confidence: 99%

Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures

Hodgson

Young

Kamarudin

et al. 2013

Journal of Applied Physics

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“…∆E was determined from the measured lasing energy shift with pressure. It is shown that, the pressure dependence of I th can be approximately explained by the mixed contributions of the radiative and Auger currents [11,12] only for the devices with normally smaller loss (1500#1) using Eq. (2).…”

Section: Resultsmentioning

confidence: 98%

“…The threshold power factor, Z th , is determined from the relationship between the injection current I and carrier density n such that Z I n ∝ . Thus by measuring Z th we also can evaluate the relative importance of the respective recombination current component in I th [11]. A jump of Z th from 2.9 to 3.5 is observed when the device was dipped from air into the liquid pressure medium (Essence-F).…”

Section: Resultsmentioning

confidence: 99%

“…This manifests itself as an increase in the threshold carrier density, n th , and threshold current, I th . In InGaAsP, the monomolecular nonradiative recombination is found to be negligible [11,12] and the total current density at threshold can be generally written as 2 3 th th th…”

Section: Samples and Experimentsmentioning

confidence: 99%

“…They consist of eight compressively strained InGaAsP quantum wells, separated by thick unstrained InGaAsP barriers (λ g = 1.1 µm). The growth procedure of the lasers can be found elsewhere [9][10][11]. The devices are buried heterostructures with stripe widths of about 1.85 µm and were designed to operate close to 1.3 µm at RT.…”

Section: Samples and Experimentsmentioning

confidence: 99%

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Coupling of large optical loss with Auger recombination in 1.3 μm InGaAsP lasers investigated using hydrostatic pressure

Jin

Sweeney

Adams

et al. 2003

Physica Status Solidi (b)

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InGaAsP lasers with different losses have been investigated under hydrostatic pressure at room temperature. It is shown that, for large loss devices, the threshold current decreases more rapidly with increasing pressure than the expected variation of the typical direct band-to-band Auger recombination currents. We also measured the spontaneous emission in a large loss device to determine the pressure dependence of the respective recombination current component at laser threshold. It is found that the Auger current reduces strongly and the radiative current also decreases with increasing pressure. This is attributed to a reduction of the total loss coupled with Auger recombination with pressure.Introduction InGaAsP/InP is an important III -V semiconductor system that is widely used for 1.3 µm and 1.55 µm lasers for optical fibre communications. It has been shown that high sensitivity in the temperature characteristics of InGaAsP lasers is primarily due to severe Auger recombination at room temperature (RT) [1][2][3][4][5][6]. Furthermore, increasing optical losses with temperature degrades the laser efficiency. This effect may in turn couple with the Auger recombination and significantly degrade the temperature characteristics of InGaAsP devices for high temperature and high power operation. For a large mirror loss device, which is due to either short cavity length or low facet reflectivity, this coupling effect with the Auger recombination is significant even at RT because a large threshold gain and high carrier density are required. This makes the quantitative analyses of device characterisation more complicated.Hydrostatic pressure increases the direct band gap, E g , of III-V semiconductor materials, whilst each recombination mechanism shows a distinct E g dependence [7,8], it is therefore very helpful to understand the effects of large losses coupled with Auger recombination using high pressure. In this paper we present a detailed investigation on the pressure dependence of the threshold current in InGaAsP lasers with different mirror losses.

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Hydrostatic pressure dependence of recombination mechanisms in GaInNAs, InGaAsP and AlGaInAs 1.3 μm quantum well lasers

Sweeney

Jin

Tomić

et al. 2003

Physica Status Solidi (b)

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From measurements of the threshold current and lasing energy as a function of pressure in InGaAsP/InP, AlGaInAs/InP and GaInNAs/GaAs based multiple quantum well lasers we determine the relative importance of the monomolecular, radiative and Auger recombination processes. For the InP based devices, we find that a simple combination of radiative and non-radiative Auger recombination can fully explain the pressure dependence of the threshold current where the threshold carrier density is approximately constant as a function of pressure. For the GaInNAs/GaAs devices we observe a large increase in threshold current with pressure. This we show is due to the interaction of the nitrogen level with the conduction band which gives rise to an increased conduction band effective mass resulting in an increase in threshold carrier density of ~12% over 10 kbar. This large increase in n th increases the monomolecular, radiative and unusually, the Auger recombination current with pressure explaining the large increase in threshold current with pressure.1 Introduction The development of cheap, temperature-insensitive lasers operating around 1.3 µm and 1.55 µm has for many years been the subject of great attention in the optoelectronics community. Due to the recent emergence and increased demand for metro and Cable Television (CATV) applications, research into efficient devices operating at these wavelengths has gained considerable momentum. The development of 1.3 µm lasers has grown relatively in importance as demand continues for short-haul communications links. In addition, semiconductor lasers operating over the range 1.4 µm to 1.5 µm are becoming of interest as laser pump sources for Raman amplifiers. The III-V materials system InGaAs(P)/InP has been successfully used to produce lasers at both 1.3 µm and 1.55 µm. In spite of the commercial success of these devices, they remain far from ideal due to material and structural dependent problems such as Auger recombination, optical losses and carrier leakage [1]. These give rise to both higher than optimum threshold current densities and high temperature sensitivity over the required temperature range of operation, (typically -4 0 °C to +80 °C), requiring complex and expensive temperature control circuitry. Alternative improved materials have been sought after to overcome these problems.

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Experimental analysis of temperature dependence in 1.3-μm AlGaInAs-InP strained MQW lasers

Cited by 52 publications

References 30 publications

Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures

Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures

Coupling of large optical loss with Auger recombination in 1.3 μm InGaAsP lasers investigated using hydrostatic pressure

Hydrostatic pressure dependence of recombination mechanisms in GaInNAs, InGaAsP and AlGaInAs 1.3 μm quantum well lasers

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