Experimental and Simulation studies on TiO2/Silicon Heterojunction diodes

Bhatia, Swasti; Raorane, Neha; Sreekumar, Nimisha; Nair, Pradeep R.; Antony, Aldrin

doi:10.1109/pvsc.2017.8366575

Cited by 1 publication

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“…Messemer et al studied work functions of ESC and HSC and derived essential results for Si-based solar cells such as (a) importance of metal oxide selective contacts with high work function, (b) need of conduction band of selective contact below valance band of absorber layer to achieve direct band-to-band tunneling and (c) importance of traps near absorber's valence band edge for trap-assisted tunneling [49]. Bhatia et al explored TiO 2 /Si heterojunction and found the way to improve its electrical properties by optimization of doping process of TiO 2 film with calculated control over the deposition temperature [50]. Furthermore, the effect of conduction band density of states to enhance light soaking effect is analysed by Srivastava et al [51].…”

Section: Introductionmentioning

confidence: 99%

Insight into conduction band density of states at c-Si/TiO₂ interface for efficient heterojunction solar cell

Bagade,

Patel

2023

Phys. Scr.

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Carrier selective solar cell has become one of the hot spots in the area of Si solar cell. The proposed architecture FTO/TiO2/c-Si/i-a-Si:H/Cu2O/back contact studied through simulation demonstrates a power conversion efficiency of 20.03%. This study is the first to report detailed exploration of effect of the conduction band density of states on the efficiency of Si solar cell. Through optimization, the conduction band density of state (1017 cm-3) drastically increases the power conversion efficiency from 18% (at 1021 cm-3) to 21.25% (at 1017 cm-3) i.e., an improvement of 18% relatively. Along with this, the parameters like absorber layer thickness, absorber’s defect density, thickness of electron transport layer and interface defect density are also optimized. Moreover, the charge transport properties and the impact of the Schottky barrier height at c-Si/TiO2 interface on band alignment is studied. After optimization of various physical parameters such as thickness (100 μm), conduction band density of states (1017 cm-3) and defect concentration (1010 cm−3) of c-Si layer, thickness of TiO2 layer (20 nm) and interface defect density at c-Si/TiO2 junction (1010 cm−2), a short-circuit current of 38.11 mA cm−2, open-circuit voltage of 0.84 V, fill factor of 85.99% is obtained, leading to an enhanced theoretical power conversion efficiency of 27.77%.

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Section: Introductionmentioning

confidence: 99%

Insight into conduction band density of states at c-Si/TiO₂ interface for efficient heterojunction solar cell

Bagade,

Patel

2023

Phys. Scr.

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Experimental and Simulation studies on TiO2/Silicon Heterojunction diodes

Cited by 1 publication

References 5 publications

Insight into conduction band density of states at c-Si/TiO₂ interface for efficient heterojunction solar cell

Insight into conduction band density of states at c-Si/TiO₂ interface for efficient heterojunction solar cell

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Experimental and Simulation studies on TiO2/Silicon Heterojunction diodes

Cited by 1 publication

References 5 publications

Insight into conduction band density of states at c-Si/TiO2 interface for efficient heterojunction solar cell

Insight into conduction band density of states at c-Si/TiO2 interface for efficient heterojunction solar cell

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Insight into conduction band density of states at c-Si/TiO₂ interface for efficient heterojunction solar cell

Insight into conduction band density of states at c-Si/TiO₂ interface for efficient heterojunction solar cell