Experimental investigation on the nonlinear dynamical states of DFB semiconductor lasers subject to dual-beam optical injection

Ren, Xiao-li; Wu, Ziyan; Fan, Li; Guang-Qiong, Xia

doi:10.1360/972013-507

Cited by 4 publications

(1 citation statement)

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“…DFB (Distributed feedback) semiconductor lasers are the key elements in optical communications [1][2][3][4][5][6][7][8][9][10][11]. Reconstruction equivalent chirp (REC) technique based on sampled grating has been proposed and widely studied to reduce the fabrication cost and improve the laser performances [12][13][14][15][16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Transient mode competition in directly modulated DFB semiconductor laser

Xiao

Shi

Zheng

et al. 2015

Sci. China Phys. Mech. Astron.

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A new effect of transient mode competition in directly modulated DFB laser based on equivalent phase-shift (EPS) technique is presented and studied. Since there are multi-order reflections in EPS structure and if the 0th order subgrating is properly designed, the transient lasing of 0th order will occur during the rising time of the injection current. As a result, transient mode competition between 1st order (main mode) and 0th order will occur accordingly. This can consume redundant carrier and suppress the transient relaxation oscillation, which may be applied in some areas like on-off switching modulation of DFB semiconductor lasers. As an example, an equivalent  phase shift (-EPS) is carefully designed to realize the effect. In such a laser the 0th order wavelength is in the margin of the material gain region and the 1st order wavelength is around the gain peak, while the stable single longitudinal mode (SLM) operation of the 1st order is guaranteed. The simulation investigation is performed. Good results with suppressed relaxation oscillation and 1.25 Gb/s directly on-off modulation (32 dB extinction ratio) are demonstrated. We believe it provides a new kind of method for on-off switching with high extinction ratio and weak relaxation oscillation. DFB semiconductor laser, mode competition, relaxation oscillation, sampled grating PACS number(s): 42.55.Px, 42.60.Mi, 42.60.Rn Citation: Xiao R L, Shi Y C, Zheng J L, et al. Transient mode competition in directly modulated DFB semiconductor laser.

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Section: Introductionmentioning

confidence: 99%

Transient mode competition in directly modulated DFB semiconductor laser

Xiao

Shi

Zheng

et al. 2015

Sci. China Phys. Mech. Astron.

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Analysis on the Characteristics of Temperature Change in Zhengzhou from 1990 to 2017

Yang

2020

J. Phys.: Conf. Ser.

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In order to find out the changing trend of temperature and extreme weather in Zhengzhou under the background of rising global temperature. This study analyzes the changing trend of annual mean temperature and seasonal average temperature in Zhengzhou from 1990 to 2017 based on meteorological data. The extreme temperature index for 28 years was extracted. The results show that from 1990 to 2017, the air temperature in Zhengzhou shows a significant upward trend, and its rising rate is higher than that of the global warming rate. There are differences in the four seasons in Zhengzhou, with the largest change rate in spring, followed by summer and autumn, and the weakest warming trend in winter. The extreme temperature index in Zhengzhou has certain regularity, the extreme index FD0 decreases significantly, the change of ID0 is not obvious, and SU25, TR20 and HTD35 increase significantly. Except for the change of IDO is not obvious, other indexes can better reflect the warming trend of temperature in Zhengzhou, indicating that the extreme temperature index has an obvious response to the change of temperature and can be used as an index to study the change of urban temperature.

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Acquiring narrow linewidth microwave signals based on an optical injection semiconductor laser under subharmonic microwave modulation

Song¹,

Wu²,

Fan³

et al. 2014

Acta Phys. Sin.

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The performances of microwave signals generated by an optically injected semiconductor laser operated at the period-one (P1) oscillation under 1/2 subharmonic microwave modulation, are investigated experimentally. The experimental results show that under suitable injection condition, the microwave signal output from an optically injected semiconductor operated at P1 oscillation can reach a frequency of 26.5 GHz limited to the experimental conditions and may have a single sideband optical spectrum structure, but the linewidth of the microwave signal is relatively wide (on the order of MHz). After adopting 1/2 subharmonic locking technique, the linewidth of the obtained microwave signal can be reduced from tens of MHz to tens of kHz. Furthermore, we analyze the influences of the power and frequency of the subharmonic microwave on the phase noise of the generated microwave signals, and further map the subharmonic microwave locking region in the parameter space of the power and frequency of the subharmonic microwave.

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Experimental investigation on the nonlinear dynamical states of DFB semiconductor lasers subject to dual-beam optical injection

Cited by 4 publications

References 0 publications

Transient mode competition in directly modulated DFB semiconductor laser

Transient mode competition in directly modulated DFB semiconductor laser

Analysis on the Characteristics of Temperature Change in Zhengzhou from 1990 to 2017

Acquiring narrow linewidth microwave signals based on an optical injection semiconductor laser under subharmonic microwave modulation

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