2015
DOI: 10.1007/s00339-015-9115-2
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Experimental observations on the crystalline structures of YAlO3 single crystal at high temperatures

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Cited by 6 publications
(2 citation statements)
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“…Table 1 represents the main result, and compares the theoretical and experimental fundamental electronic gaps as well as 37 8.4 (HSE06) 310-355 38,39 420 340 GdAlO 3 :Ce 7.3 15 7.0 (HSE06) 230-310 [40][41][42] 457 363 YAlO 3 :Ce 7.9 43 7.9 (HSE06) 260-395 [44][45][46][47] 347 355 LaAlO 3 :Ce 5.5 48 4.7 (HSE06) 209-314 49,50 283 268 principal luminescence wavelengths. We find that generally hybrid functionals give the best E g for these rare-earth aluminates.…”
Section: Resultsmentioning
confidence: 99%
“…Table 1 represents the main result, and compares the theoretical and experimental fundamental electronic gaps as well as 37 8.4 (HSE06) 310-355 38,39 420 340 GdAlO 3 :Ce 7.3 15 7.0 (HSE06) 230-310 [40][41][42] 457 363 YAlO 3 :Ce 7.9 43 7.9 (HSE06) 260-395 [44][45][46][47] 347 355 LaAlO 3 :Ce 5.5 48 4.7 (HSE06) 209-314 49,50 283 268 principal luminescence wavelengths. We find that generally hybrid functionals give the best E g for these rare-earth aluminates.…”
Section: Resultsmentioning
confidence: 99%
“…14,15) Therefore, it is a promising candidate for a next-generation gate dielectric material with a high permittivity that should take the place of SiO 2 as a gate dielectric in metal oxide semiconductor (MOS) field-effect transistors (FETs). 16) We have already reported several papers on YAP, especially about various effects of thermal annealing and ion implantation on its crystallinity 17) and photoluminescence (PL). 18) If we take the above-mentioned applications of THz waves and YAP into account, it is important to clarify the complex permittivity, complex refractive index, and α of YAP at THz frequencies.…”
Section: Introductionmentioning
confidence: 99%