Experimentally investigating the performance degradations of the CMOS PA at different temperatures

He, Zhongjie; Zhou, Shaohua; Nie, Meining

doi:10.1063/5.0071801

Cited by 11 publications

(9 citation statements)

References 24 publications

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“…Literature studies have shown [ 37 ] that the on-state resistance between source and drain increases with temperature, which leads to a drop in the P out . The expression for on-resistance is [ 37 ]

where the constant k is a process parameter, R 0 is a constant independent of voltage and temperature, α ≈ 1.5, β ≈ 0.2, V gs is the gate voltage, and V th is the threshold voltage.…”

Section: Resultsmentioning

confidence: 99%

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On-Chip Temperature Compensation for Small-Signal Gain Variation Reduction

2022

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Power amplifier (PA) specifications are closely related to changes in temperature; thus, the small-signal gain (S21) of PA decreases with the temperature increase. To compensate for the degradation caused by the decrease in S21, we present a compensation circuit that consists of two diodes and four resistors. At the same time, a differential stacked millimeter-wave wideband PA was designed and implemented based on this compensation circuit and 55 nm CMOS process. The post-layout simulation results showed that the fluctuation of S21 reduced from 2.4 dB to 0.1 dB in the frequency range of 25−40 GHz over the temperature range of −40 °C to 125 °C. Furthermore, the proposed on-chip temperature compensation circuit also applies to multi-stage cascaded microwave/mm-wave power amplifiers.

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where the constant k is a process parameter, R 0 is a constant independent of voltage and temperature, α ≈ 1.5, β ≈ 0.2, V gs is the gate voltage, and V th is the threshold voltage.…”

Section: Resultsmentioning

confidence: 99%

“…The specific reasons are discussed below. Literature studies have shown [37] that the on-state resistance between source and drain increases with temperature, which leads to a drop in the P out . The expression for on-resistance is [37] R…”

Section: Output Power and Pae At Different Temperaturesmentioning

confidence: 99%

On-Chip Temperature Compensation for Small-Signal Gain Variation Reduction

2022

Self Cite

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“…Recently, the influence of temperature on PA has been discussed. It has been also reported that the rising temperature can lead to the performance degradation of PA 10–15 . However, the methods presented in similar literatures all need much measurement time to obtain the performance varitions 6,12,13,15 .…”

Section: Introductionmentioning

confidence: 99%

“…However, the methods presented in similar literatures all need much measurement time to obtain the performance varitions 6,12,13,15 . This drawback causes the characteristics to be studied only at certain temperatures 6,10–16 . Moreover, considering the limitation of experimental devices, it is almost impossible to measure all the data.…”

Section: Introductionmentioning

confidence: 99%

Temperature behavior modeling based on resilient BPNN for a GaAs pHEMT high gain MMIC PA

Lin,

Jia,

et al. 2023

Int J Numerical Modelling

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As the key component of transceiver, power amplifier (PA) plays an extremely important role in wireless communication system. In order to accurately characterize the performance variation of PA at any temperature, the temperature behavior of a gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) high gain monolithic microwave integrated circuit (MMIC) PA is modeled in this paper. In this modeling, the resilient back propagation neural network (BPNN) is utilized to do the temperature behavior modeling for this PA. The investigation shows that the minimum mean square error (MSE) of the prediction results is 4.9607 × 10−4, which implies that it is feasible to use this modeling method to characterize the temperature behavior of PA. This modeling not only theoretically overcomes the problem of slow convergence speed of BPNN, but also solves the limitation of experimental devices and time setting. It will provide a more convenient guidance for test engineers.

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“…According to previous papers, investigation on temperature behavior is still a hot issue [ 9 , 10 ]. However, the common temperature ranges, depending on the extreme temperature, are −40–120 °C, −25–125 °C, 10–90 °C, 20–120 °C or 25–125 °C and so on [ 8 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 ]. Meanwhile, the equal interval temperatures are adopted [ 8 , 15 , 16 , 17 , 18 , 19 ].…”

Section: Introductionmentioning

confidence: 99%

Investigation on Temperature Behavior for a GaAs E-pHEMT MMIC LNA

Lin

Jia

Wu³

et al. 2022

Micromachines

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In order to investigate the temperature behavior for monolithic microwave integrated circuits (MMICs) under alpine conditions, the performance parameters of a 0.4–3.8 GHz gallium arsenide (GaAs) enhancement pseudomorphic high-electron-mobility transistor (E-pHEMT) low-noise amplifier (LNA) are tested at different temperatures. The typical temperatures of −39.2 °C, −32.9 °C, −25.3 °C, −11.3 °C, −4.9 °C, 0 °C and 23 °C are chosen as the alpine condition. The major performance indexes including the direct current (DC) characteristics, S-parameters, stability, radio frequency (RF) output characteristics, output third-order intersection point (OIP3) and noise figure (NF), which were inspected and analyzed in detail. The results show that the DC characteristics, small-signal gain (S21), RF output characteristics and NF all deteriorate with the rising temperature due to the decrease in two-dimensional electron gas mobility (). Contrary to this trend, the special design makes stability and OIP3 increase. For further application of this MMIC LNA under alpine conditions, several measures can be utilized to remedy performance degradation. This paper can provide some significant engineering value for the reliable design of MMICs.

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Experimentally investigating the performance degradations of the CMOS PA at different temperatures

Cited by 11 publications

References 24 publications

On-Chip Temperature Compensation for Small-Signal Gain Variation Reduction

On-Chip Temperature Compensation for Small-Signal Gain Variation Reduction

Temperature behavior modeling based on resilient BPNN for a GaAs pHEMT high gain MMIC PA

Investigation on Temperature Behavior for a GaAs E-pHEMT MMIC LNA

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