Exploiting channeling in Helium Ion Microscopy

Hlawacek, Gregor; Veligura, Vasilisa; Mocking, Tijs F.; George, Antony; Gastel, Raoul van; Zandvliet, Henricus J.W.; Poelsema, Bene; Lorbek, Stefan

doi:10.1017/s1431927612005880

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2016

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“…Therein, it is shown that HIM is more sensitive and consistent than SEM for characterizing the number of layers and the morphology of 2D materials. It was also shown that HIM is very sensitive in characterizing supported, thin organic layers due to its high surface sensitivity [24,25].…”

Section: Introductionmentioning

confidence: 99%

Imaging of carbon nanomembranes with helium ion microscopy

Beyer¹,

Vieker²,

Klett³

et al. 2016

Nano Online

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Section: Introductionmentioning

confidence: 99%

Imaging of carbon nanomembranes with helium ion microscopy

Beyer¹,

Vieker²,

Klett³

et al. 2016

Nano Online

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“…During the last decade the imaging capabilities of HIM were examined in the field of material science [15,[17][18][19][20][21][22][23] as well as in biology [15,16,[24][25][26]. Different techniques such as secondary electron energy filtering [27], helium ion channeling contrast [28][29][30], helium ion transmission microscopy [31], secondary ion mass spectrometry [32,33], and ionoluminescence [34,35] were developed.…”

Section: Introductionmentioning

confidence: 99%

Scanning reflection ion microscopy in a helium ion microscope

Petrov¹,

Vyvenko²

2016

Nano Online

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Reflection ion microscopy (RIM) is a technique that uses a low angle of incidence and scattered ions to form an image of the specimen surface. This paper reports on the development of the instrumentation and the analysis of the capabilities and limitations of the scanning RIM in a helium ion microscope (HIM). The reflected ions were detected by their "conversion" to secondary electrons on a platinum surface. An angle of incidence in the range 5-10° was used in the experimental setup. It was shown that the RIM image contrast was determined mostly by surface morphology but not by the atomic composition. A simple geometrical analysis of the reflection process was performed together with a Monte Carlo simulation of the angular dependence of the reflected ion yield. An interpretation of the RIM image formation and a quantification of the height of the surface steps were performed. The minimum detectable step height was found to be approximately 5 nm. RIM imaging of an insulator surface without the need for charge compensation was successfully demonstrated.

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Exploiting channeling in Helium Ion Microscopy

Abstract: Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Cited by 2 publications

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Imaging of carbon nanomembranes with helium ion microscopy

Imaging of carbon nanomembranes with helium ion microscopy

Scanning reflection ion microscopy in a helium ion microscope

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