Exploring the electronic and optical anisotropy of quasi-one-dimensional ternary chalcogenide CrSbSe3: a DFT study

Sujith, C.P.; Joseph, Saji; Mathew, Vinod

doi:10.1016/j.solidstatesciences.2022.106926

Cited by 9 publications

(4 citation statements)

References 62 publications

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“…The optical bandgap estimated ≈1.67 eV based on the Tauc method, [ 29 ] which fits well with the reported ≈1.60 eV. [ 20 ]…”

Section: Resultssupporting

confidence: 80%

“…The optical bandgap estimated ≈1.67 eV based on the Tauc method, [29] which fits well with the reported ≈1.60 eV. [20] To investigate the photoelectric properties of the HfSnS 3 , a two-terminal device on SiO 2 /Si substrate was fabricated in Figure 5a. The transfer characteristic curve of HfSnS 3 -based FET was illustrated in Figure S9 (Supporting Information).…”

Section: (Supporting Information)supporting

confidence: 75%

“…al. revealed the energy bandgap and optical bandgap of HfSnS 3 that was ≈1.72–1.85 eV (indirect) via different DFT methods, [ 20 ] as well as Naghavi et. al.…”

Section: Introductionmentioning

confidence: 99%

“…[19 ] Recently, the ternary transition metal chalcogenides MSnS 3 (M = Hf and Zr) have been indicated to exhibit a large birefringence factor with comparatively large optical anisotropy, as well as a suitable bandgap that was of potential to develop the multifunctional optoelectronic device. [20] Mathew et. al.…”

Section: Introductionmentioning

confidence: 99%

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Synthesis and Broadband Photodetection of a P‐Type 1D Van der Waals Semiconductor HfSnS₃

Yang

Zhang

et al. 2023

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Abstract1D van der Waals (vdW) materials have attracted significant interest in recent years due to their giant anisotropic and weak interlayer‐coupled characters. More 1D vdW materials are urgently to be exploited for satisfying the practice requirement. Herein, the study of 1D vdW ternary HfSnS3 high‐quality single crystals grown via the chemical vapor transport technique is reported. The Raman vibration modes and band structure of HfSnS3 are analyzed via DFT calculations. Its strong in‐plane anisotropic is verified by the polarized Raman spectroscopy. The field‐effect transistors (FETs) based on the HfSnS3 nanowires demonstrate p‐type semiconducting behavior as well as outstanding photoresponse in a broadband range from UV to near‐infrared (NIR) with short response times of ≈0.355 ms, high responsivity of ≈11.5 A W−1, detectivity of ≈8.2 × 1011, external quantum efficiency of 2739%, excellent environmental stability, and repeatability. Furthermore, a typical photoconductivity effect of the photodetector is illustrated. These comprehensive characteristics can promote the application of the p‐type 1D vdW material HfSnS3 in optoelectronics.

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“…The optical bandgap estimated ≈1.67 eV based on the Tauc method, [ 29 ] which fits well with the reported ≈1.60 eV. [ 20 ]…”

Section: Resultssupporting

confidence: 80%

Section: (Supporting Information)supporting

confidence: 75%

“…al. revealed the energy bandgap and optical bandgap of HfSnS 3 that was ≈1.72–1.85 eV (indirect) via different DFT methods, [ 20 ] as well as Naghavi et. al.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Synthesis and Broadband Photodetection of a P‐Type 1D Van der Waals Semiconductor HfSnS₃

Yang

Zhang

et al. 2023

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Computational study of the structural, optoelectronic and thermoelectric properties of scandium-based ternary chalcogenides XScSe2 (X = Li, Rb) for applications in photovoltaic cell

Fatima,

Khalil,

Hussain

et al. 2023

J Comput Electron

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DFT analysis of the electronic, optical, phonon, elastic, and mechanical features of ternary Rb2XS3 (X = Si, Ge, Sn) chalcogenides

Uğur,

Güler,

Özdemir

et al. 2024

Opt Quant Electron

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Density functional theory (DFT) calculations were executed for the titled features of hitherto unreported Rb2XS3 (X = Si, Ge, Sn) chalcogen compounds. All compounds were found to be in semiconducting character where they demonstrate high-k dielectric properties, high optical conductivity, high refractivity and reasonable absorbance. In addition, obtained phonon dispersion curves of all compounds with positive phonon frequencies stipulate the dynamical stability. Also, computed elastic stiffness constants prove mechanical stability and bilateral agreement between Pugh ratio analyses with Poisson ratio results confirms the ductile mechanical feature of all addressed compounds. Overall, with satisfactory optical, elastic and mechanical aspects, Rb2XS3 (X = Si, Ge, Sn) chalcogenides can be promising materials for recent optoelectronics and microelectronics with diverse applications.

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Exploring the electronic and optical anisotropy of quasi-one-dimensional ternary chalcogenide CrSbSe3: a DFT study

Cited by 9 publications

References 62 publications

Synthesis and Broadband Photodetection of a P‐Type 1D Van der Waals Semiconductor HfSnS₃

Synthesis and Broadband Photodetection of a P‐Type 1D Van der Waals Semiconductor HfSnS₃

Computational study of the structural, optoelectronic and thermoelectric properties of scandium-based ternary chalcogenides XScSe2 (X = Li, Rb) for applications in photovoltaic cell

DFT analysis of the electronic, optical, phonon, elastic, and mechanical features of ternary Rb2XS3 (X = Si, Ge, Sn) chalcogenides

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Exploring the electronic and optical anisotropy of quasi-one-dimensional ternary chalcogenide CrSbSe3: a DFT study

Cited by 9 publications

References 62 publications

Synthesis and Broadband Photodetection of a P‐Type 1D Van der Waals Semiconductor HfSnS3

Synthesis and Broadband Photodetection of a P‐Type 1D Van der Waals Semiconductor HfSnS3

Computational study of the structural, optoelectronic and thermoelectric properties of scandium-based ternary chalcogenides XScSe2 (X = Li, Rb) for applications in photovoltaic cell

DFT analysis of the electronic, optical, phonon, elastic, and mechanical features of ternary Rb2XS3 (X = Si, Ge, Sn) chalcogenides

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Synthesis and Broadband Photodetection of a P‐Type 1D Van der Waals Semiconductor HfSnS₃

Synthesis and Broadband Photodetection of a P‐Type 1D Van der Waals Semiconductor HfSnS₃