Exploring tungsten-oxygen vacancy synergy: Impact on leakage characteristics in Hf0.5Zr0.5O2 ferroelectric thin films

Abstract

The recent discovery of ferroelectric properties in HfO2 has sparked significant interest in the fields of nonvolatile memory and neuromorphic computing. Yet, as device scaling approaches sub-nanometer dimensions, leakage currents present a formidable challenge. While tungsten (W) electrodes are favored over traditional TiN electrodes for their superior strain and interface engineering capabilities, they are significantly hampered by leakage issues. In this study, we elucidate a positive feedback mechanism attributable to W electrodes that exacerbates oxygen vacancy defects, as evidenced by density functional theory computations. Specifically, intrinsic oxygen vacancies facilitate the diffusion of W, which, in turn, lowers the formation energy of additional oxygen vacancies. This cascade effect introduces extra defect energy levels, thereby compromising the leakage characteristics of the device. We introduce a pre-annealing method to impede W diffusion, diminishing oxygen vacancy concentration by 5%. This reduction significantly curtails leakage currents by an order of magnitude. Our findings provide a foundational understanding for developing effective leakage suppression strategies in ferroelectric devices.