Extended X-ray absorption fine structure study of the Er bonding in AlNO:Er<i>x</i> films with <i>x</i> ≤ 3.6%

Katsikini, M.; Katchkanov, V.; Boulet, Pascal; Edwards, P. R.; Brien, Valérie

doi:10.1063/1.5036614

Cited by 3 publications

(3 citation statements)

References 34 publications

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“…It is then very difficult to propose the existence erbium rich precipitates in the AlN:Er system to justify the observed luminescence concentration quenching, and one has to look for other reasons. A confirmation of the absence of Er-Er bonds in these samples, obtained by using EXAFS on the Er edge, can be found in Ref [13].…”

Section: Discussionsupporting

confidence: 71%

Room temperature cathodoluminescence quenching of Er3+ in AlNOEr

Brien

Edwards

Boulet

2019

Journal of Luminescence

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This paper reports a cathodoluminescence (CL) spectroscopic study of nanogranular AlNOEr x samples with erbium content, x, in the range 0.5-3.6 atomic %. A wide range of erbium concentration was studied with the aim of understanding the concentration quenching of CL. The composition of thin films, deposited by radiofrequency reactive magnetron sputtering, was accurately determined by Energy Dispersive X-ray Spectroscopy (EDS). CL emission was investigated in the extended visible spectral range from 350 nm to 850 nm. The critical concentration of luminescent activator Er 3+ above which CL quenching occurs is 1 %; the corresponding critical distance between Er 3+ ions in AlNOEr x is about 1.0 nm. The quenching mechanism is discussed. We discount an exchange-mediated interaction in favour of a multipole-multipole phononassisted interaction.

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Section: Discussionsupporting

confidence: 71%

Room temperature cathodoluminescence quenching of Er3+ in AlNOEr

Brien

Edwards

Boulet

2019

Journal of Luminescence

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“…with 4 nitrogen atoms as nearest neighbors, 12 Ga-atoms in the second, 10 N-atoms in the third and 6Ga atoms in the fourth neighbor shells. The first neighbor shell is strongly distorted (by ~11% with an Eu-N nearest neighbor distance of 2.15 Å compared to a Ga-N nearest neighbor distance of 1.94 Å in pure GaN) as expected, due to the large effective ionic radius of Eu 3+ (linearly estimated to 83.5 pm) compared to Ga 3+ (61 pm) in tetrahedral environment66 and in good agreement with previous studies on rare earth doped GaN and other III-N alloys61,62,67,68 . The more distant shells are found close to the expected positions in undisturbed GaN (with a Eu-Ga next-nearest neighbour distance of 3.17 Å compared to a Ga-Ga nearest neighbor distance of 3.18 Å in GaN).…”

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confidence: 90%

Incorporation of Europium into GaN Nanowires by Ion Implantation

et al. 2019

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Rare earth (RE) doped GaN nanowires (NWs), combining the well-defined and controllable optical emission lines of trivalent RE ions with the high crystalline quality, versatility and small dimension of the NW host, are promising building blocks for future nanoscale devices in optoelectronics and quantum technologies. Europium doping of GaN NWs was performed by ion implantation and structural and optical properties were assessed in comparison to thin film reference samples. Despite some surface degradation for high implantation fluences, the NW core remains of high crystalline quality with lower concentrations of extended defects than observed in ion implanted thin films. Strain introduced by implantation defects is efficiently relaxed in NWs and the measured deformation stays much below that in thin films implanted in the same conditions. Optical activation is achieved for all samples after annealing and, while optical centres are similar in all samples, Eu 3+ emission from NW samples is shown to be less affected by residual implantation damage than for the case of thin films. The incorporation of Eu in GaN NWs was further investigated by nano-cathodoluminescence and X-ray absorption spectroscopy (XAS). Maps of the Eu-emission intensity within a single NW agree well with the Eu-distribution predicted by Monte Carlo simulations suggesting that no pronounced Eu-diffusion takes place. XAS shows that 70-80% of Eu is found in the 3+ charge state while 20-30% is 2+ attributed to residual implantation defects. A similar local environment was found for Eu in NWs and thin films: for low fluences, Eu is mainly incorporated on substitutional Ga-sites while for high fluences XAS points at the formation of a local EuN-like next neighbour structure. Results reveal the high potential of ion implantation as a processing tool at the nano-scale.

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“…The diameter of the Al target was 2 inches and it was doped with 2.0 at.% of Er via arc-melting. The reason of choosing this doping level is that it provides the best photoluminescence efficiency [6,24,25]. The substrate was polished Si (100) and the working gas was a mixture of argon (70%) and nitrogen (30%).…”

Section: Methodsmentioning

confidence: 99%

Substrate Temperature Dependent Properties of Sputtered AlN:Er Thin Film for In-Situ Luminescence Sensing of Al/AlN Multilayer Coating Health

et al. 2018

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The integrity and reliability of surface protective coatings deposited on metal surface could be in-situ monitored via the attractive luminescence sensing technique. In this paper, we report the influence of substrate temperature on the properties of erbium (Er) doped aluminum nitride (AlN) film, which could be applied as a luminescent layer for monitoring the health of multilayered Al/AlN coating. The AlN:Er films were deposited via reactive radio-frequency magnetron sputtering, and the silicon substrate temperature was varied from non-intentional heating up to 400 °C. The composition, morphology, crystalline structure, and dielectric function of the AlN:Er films deposited under these different substrate temperature conditions were studied. These properties of the AlN:Er films show strong correlation with the substrate temperature maintained during film fabrication. The obtained AlN:Er films, without further annealing, exhibited photoluminescence peaks of the Er3+ ions in the visible wavelength range and the strongest photoluminescence intensity was observed for the AlN:Er film deposited with the temperature of substrate kept at 300 °C. The results demonstrated in this work offer guidance to optimize the substrate temperature for the deposition of AlN:Er film for future application of this sensing technique to thin metal components.

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Extended X-ray absorption fine structure study of the Er bonding in AlNO:Erx films with x ≤ 3.6%

Cited by 3 publications

References 34 publications

Room temperature cathodoluminescence quenching of Er3+ in AlNOEr

Room temperature cathodoluminescence quenching of Er3+ in AlNOEr

Incorporation of Europium into GaN Nanowires by Ion Implantation

Substrate Temperature Dependent Properties of Sputtered AlN:Er Thin Film for In-Situ Luminescence Sensing of Al/AlN Multilayer Coating Health

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