Extinction Ratio Improvement Due to a Bogatov-Like Effect in Ultralong Semiconductor Optical Amplifiers

Abstract

Abstract-Theoretical results on the extinction ratio (ER) improvement in ultralong semiconductor optical amplifiers (UL-SOAs) are presented indicating a Bogatov-like effect in the saturated section. Starting from general nonlinear gain equations, an analytic description of the Bogatov-like effect is derived in terms of gain coefficients. These equations are used to explain the results of fully numerical simulations. The data signal's ER improves because of a two-step process. First, the data signal cross-gain modulates the additionally injected CW signal. Second, due to this inverse modulation, the data signal's states are differently amplified via the Bogatov-like effect. Since the ER improvement is caused by the fast intraband effects, this simple scheme has the potential for high-speed regeneration.Index Terms-All-optical, Bogatov effect, extinction ratio improvement, ultralong semiconductor optical amplifiers (UL-SOAs).

Optimization of arrayed waveguide grating‐filtering response for efficient analog radio‐over‐fiber fronthaul over a wavelength‐division multiplexing passive optical network

“…However, even in our proposed topology, where the cavity length is much shorter, no more than a few meters, the Bogatov effect still holds and some red‐shift still occurs. This is because Bogatov‐like intra‐band effects, 32,33 such as spectral hole burning (SHB), carrier heating (CH), and free‐carrier absorption (FCA), also induce an asymmetric gain.…”

Investigation of a cross‐gain modulation in a semiconductor optical amplifier based on a quantum dot‐in‐a‐well structure

“…3.3 Extinction ratio and peak chirp dependence on the detuning and the CW pumping power ER and chirp are important characteristics of SOA performance for the WC applications [10,[31][32][33][34]. The ER improvement methods have been extensively studied both theoretically and experimentally (see [31][32][33][34] and references therein). In particular, an ER improvement method based on the fast non-linear intra-band effects in the bulk ultralong (UL) SOA has been presented [33,34].…”

“…The ER improvement methods have been extensively studied both theoretically and experimentally (see [31][32][33][34] and references therein). In particular, an ER improvement method based on the fast non-linear intra-band effects in the bulk ultralong (UL) SOA has been presented [33,34]. Typically, higher ER can be achieved for longer devices since a smaller bandwidth gives a larger differential gain [10].…”