Extraction of accurate behavioral models for power amplifiers with memory effects using two-tone measurements

Ku, Hyunchul; McKinley, M.D.; Kenney, J.S.

doi:10.1109/mwsym.2002.1011578

Cited by 21 publications

(3 citation statements)

References 12 publications

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“…As the power of the power transistor excitation signal is further improved, the signal with a high peak-to-average power ratio will drive the transistor to a fully saturated state, making it work under strong nonlinear conditions and exhibit a memory effect [ 28 , 29 ]. The existence of the memory effect means that the instantaneous output of the device at any time depends not only on the instantaneous input at the current time, but also on the input of the device at all past times.…”

Section: Polynomial Based Behavior Modelmentioning

confidence: 99%

Review of RF Device Behavior Model: Measurement Techniques, Applications, and Challenges

Li,

Su,

Wang

et al. 2023

Micromachines

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This review presents a concise overview of RF (radio frequency) power transistor behavior models, which is crucial for optimizing RF performance in high-frequency applications like wireless communication, radar, and satellites. The paper highlights the significance of accurate modeling in understanding transistor behavior and traces the evolution of behavior modeling techniques. Different behavior modeling strategies, such as LUT (look-up table) based models, polynomial equation-based models, and machine learning based models, are discussed along with their unique characteristics and modeling challenges. The review explores the difference between behavior models and the conventional empirical or physics-based modeling approaches, addressing the challenges of the accurate characterization of transistors at high frequencies and power levels. This paper concludes with an outlook of emerging trends, such as physical models combined with behavior models, shaping the future of RF power transistor modeling for more efficient communication systems.

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Section: Polynomial Based Behavior Modelmentioning

confidence: 99%

Review of RF Device Behavior Model: Measurement Techniques, Applications, and Challenges

Li,

Su,

Wang

et al. 2023

Micromachines

View full text Add to dashboard Cite

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“…Whilst the proposed scheme is a special case of a general cascade DPD structure, previous work such as [9]- [12] are not ideally suited to, with low complexity, address the aggravation of memory effects and gain transitions caused by frequency relocation. Thereby, this work is of use to reduce complexity for frequency relocation DPDs with sparse multi-band signals.…”

Section: Proposed Dpd Schematicmentioning

confidence: 99%

Improved Digital Predistortion for Concurrent Multiband Transmission Using Frequency Relocation

Langborn

Fager

Hou

et al. 2023

IEEE Microw. Wireless Tech. Lett.

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In concurrent multi-band settings with large carrier spacings between bands, digital pre-distorter (DPD) implementations face the issue of how to linearize a sparse signal spectrum spanned over large bandwidths at low computational complexity. Frequency relocation is one possible approach, which involves relocating baseband carriers to have reduced frequency spacing with the help of band-limiting functions, to yield a denser and smaller signal bandwidth for the DPD to linearize. In this paper, frequency relocation for transmitters with frequency varying gain and phase is explicitly considered. It is shown that bandwise pre-equalization during frequency relocation can reduce the computational complexity for a certain allowed in-band error.

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“…Indeed, memoryless models are simple for modeling, but they are not precise in characterizing the amplifier due to their lack in representing asymmetry of the IMD and fundamental components. It was stated in [21] that, although memoryless predistortion demonstrated improvement for a 0.5-W handset amplifier, it was unable to give the same improvement for a 45-W power amplifier. In this paper, a new behavioral model is proposed that is capable of characterizing asymmetry in the magnitude and phase of the IMD components.…”

Section: Introductionmentioning

confidence: 99%

A low-order nonlinear amplifier model with distributed delay terms

Yüzer¹,

Demır²

2014

Turk J Elec Eng & Comp Sci

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Abstract:In this paper, a novel behavioral modeling technique for the characterization of memory effects of amplifiers is proposed. This characterization utilizes asymmetric intermodulation distortion (IMD) components, which are the result of a 2-tone excitation of a nonlinear amplifier. These asymmetric IMD components are represented basically by a power series, where each term in the series has its own time delay term. These time delay terms successfully justify the presence of asymmetry in the intermodulation components, which leads to the prediction of amplitude-to-amplitude and amplitude-to-phase distortions. The parameters of the model are extracted using 2-tone measurements. A 100-W peak power amplifier is examined. Model predictions are verified by the measurement results of a 4-tone stimulus. The proposed model can also be used in time domain analysis with arbitrary excitation.

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Extraction of accurate behavioral models for power amplifiers with memory effects using two-tone measurements

Cited by 21 publications

References 12 publications

Review of RF Device Behavior Model: Measurement Techniques, Applications, and Challenges

Review of RF Device Behavior Model: Measurement Techniques, Applications, and Challenges

Improved Digital Predistortion for Concurrent Multiband Transmission Using Frequency Relocation

A low-order nonlinear amplifier model with distributed delay terms

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