Extraordinary Hall effect in Co-Pd bilayers

Shaya, O.; Karpovski, M.; Gerber, A.

doi:10.1063/1.2770822

Cited by 24 publications

(12 citation statements)

References 19 publications

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“…Longitudinal resistivity ρ and Hall resistivity ρ H of a series of Ni films are shown in Similar results were found in Co monolayers, Co-Pd bilayers [24], Fe-Pt films [25] and Fe/Ge multilayers [26]. Fig.3 presents the room temperature field sensitivity of polycrystalline Ni films as a function of their thickness.…”

Section: Enhancement Of Sensitivity By Surface Scatteringsupporting

confidence: 60%

Perspective of Spintronics Applications Based on the Extraordinary Hall Effect

Gerber¹,

Riss²

2008

Journal of Nanoelectronics and Optoelectronics

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Extraordinary Hall effect (EHE) is a spin-dependent phenomenon that generates voltageproportional to magnetization across a current carrying magnetic film. Magnitude of the effect can be artificially increased by stimulating properly selected spin-orbit scattering events. Already achieved sensitivity of the EHE-based sample devices exceeds 1000 Ω/T, which surpasses the sensitivity of semiconducting Hall sensors. Linear field response, thermal stability, high frequency operation, sub-micron dimensions and, above all, simplicity, robustness and low cost manufacture are good reasons to consider a wide scale technological application of the phenomenon for magnetic sensors and memory devices.2 Anisotropic magnetoresistance [1,2], planar Hall effect [3,4], spin-dependent tunneling [5,6] and the extraordinary or anomalous Hall effect (EHE) [7,8] are spin-dependent electronic transport phenomena known for many years. However, it is the discovery of the giant magnetoresistance (GMR) [9,10] that gave birth to the term spintronics and triggered a world-wide outburst of the spin-related research. Extraordinary Hall Effect (EHE) in magnetic materials was discovered more than a century ago [7], extensively studied both theoretically and experimentally [8], and left out of the mainstream research for the last thirty years. The possibility to use the effect for technical applications, such as magnetic sensors and nonvolatile magnetic random access memories (MRAM), has been mentioned more than three decades ago [11], but no significant progress was reported until recently. A probable reason for this is that although EHE in bulk magnetic materials can be significantly higher than the ordinary Hall effect in normal metals, its magnitude remained far beyond the sensitivity of semiconductors and magnetic sensors based on the anisotropic magnetoresistance [12]. The renewed interest in EHE has only recently arisen when some recipes to enhance the effect were found [13][14][15].The Hall effect in magnetic materials is commonly described [8,16] by the phenomenological equationwhere ρ H is the Hall resistivity, B, H and M are components of the magnetic induction, applied field and magnetization normal to the film plane, and D is the demagnetization factor. R 0 is the ordinary Hall coefficient related to the Lorentz force acting on moving charge carriers. R EHE , the extraordinary Hall coefficient, is associated with a break of the right-left symmetry at spin-orbit scattering in magnetic materials.. Demagnetization factor D is equal to 1 when field is applied perpendicular to a homogeneous magnetic film. In this case Eq.1 is simplified toVoltage measured between Hall contacts located perpendicular to the direction of an electric current is given by:where I is current and t thickness of the film. Fig.1 presents a typical field dependence of the Hall resistance (in a 4 nm thick Ni film at room temperature with field applied normal to the film plane.Magnetization normal to the film increases with field till saturation at about ±0.2 T. The EH...

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Section: Enhancement Of Sensitivity By Surface Scatteringsupporting

confidence: 60%

Perspective of Spintronics Applications Based on the Extraordinary Hall Effect

Gerber¹,

Riss²

2008

Journal of Nanoelectronics and Optoelectronics

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“…10. Since the resistivity of the different ferromagnetic layers is unknown the Hall resistivity values given are the effective ones that correspond to the total stack thickness, including both ferromagnetic and non-magnetic layers without taking account of the strong shunting effects of the Pt layer and underlayer [41,42] 6 and [Co/Pt] 6 multilayers (positive and negative respectively) as seen by the measurements of their EHE loops. For the samples with x ¼1 and 1.5 the shape of the EHE loop is similar to that of the VSM.…”

Section: Resultsmentioning

confidence: 99%

Magnetization reversal in [Ni/Pt]6/Pt(x)/[Co/Pt]6 multilayers

Siadou

Androutsopoulos

Panagiotopoulos

et al. 2011

Journal of Magnetism and Magnetic Materials

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“…In addition, the asymmetrical MR loops arose possibly due to the asymmetrical skew scattering of spin up and spin down electrons from spin orbit interaction. 15,16 FIG. 4.…”

Section: Perpendicular Anisotropy L1 0 -Fept Based Pseudo Spin Valve mentioning

confidence: 96%

Perpendicular anisotropy L1-FePt based pseudo spin valve with Ag spacer layer

Han

Evans

et al. 2011

Applied Physics Letters

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The effects of post-annealing temperature of the Ag spacer layer on the structural, magnetic, spin, and magneto-transport properties of perpendicular anisotropy pseudo spin valves L10-Fe50Pt50/Ag/L10-Fe50Pt50 had been investigated. The Ag spacer layer was post-annealed at various temperatures of 300, 400, and 500 °C. A giant magnetoresistance ratio of 1.1% and 2.2% was achieved at room temperature and 77 K, respectively, when Ag was post-annealed at 300 °C. This was a significant improvement from the use of Au, Pt, and Pd spacer materials.

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Extraordinary Hall effect in Co-Pd bilayers

Cited by 24 publications

References 19 publications

Perspective of Spintronics Applications Based on the Extraordinary Hall Effect

Perspective of Spintronics Applications Based on the Extraordinary Hall Effect

Magnetization reversal in [Ni/Pt]6/Pt(x)/[Co/Pt]6 multilayers

Perpendicular anisotropy L1-FePt based pseudo spin valve with Ag spacer layer

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