Fabrication and Power-Management Demonstration of Four-Terminal FinFETs

Abstract

A high-aspect-ratio and damage-free vertical ultrathin channel (UTC) for a vertical-type double-gate (DG) MOSFET has been fabricated by using low-energy neutral-beam (NBE) etching. Also, dynamically power-controllable CMOS technology has been investigated using separated-gate four-terminal (4T) FinFETs. We demonstrate that the power consumption of the CMOS inverter can dynamically be controlled using the 4T-FinFET.