Fabrication of Electrode Groove on Silicon Solar Cell using High-Pressure Surface Discharge

Hamada, Toshiyuki; Arakawa, Shunichi; Otsubo, Masahisa; Sakoda, Tatsuya

doi:10.1541/ieejfms.128.733

Cited by 4 publications

(2 citation statements)

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“…In addition, the etching of width direction depended on the diameter of surface streamer. The diameter of an intensive surface streamer was estimated to be about 250 µm [3]. The etching in the width direction more than 250 µm is performed by radical species; therefore, the etching rate of the edge region is much slow.…”

Section: Resultsmentioning

confidence: 99%

“…However, as for the solar cell surface, pyramids-like structure (surface roughness of 10 µm) for reduction of light reflection intensity is formed by a wet chemical etching. The etching surface was not flat; therefore, the etched structure profile could not be correctly evaluated [3]. In this study, the cross sections of etched crystalline Si substrates using the surface discharge plasma were examined.…”

Section: Introductionmentioning

confidence: 99%

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Examination of Maskless Etching Technique Using a Localized Surface Discharge Plasma

Hamada

Sakoda

Otsubo

2009

IEEJ Transactions Elec Engng

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A maskless etching technique which is useful for solar cell manufacturing and microelectronics was examined using the localized surface discharge plasma at atmospheric pressure. Etchings were carried out on a crystalline silicon (Si) substrate and a silicon nitride (SiN) film coated on a Si substrate. Two-and three-dimensional etching profiles were investigated. Based on the results, etching rates and an etching mechanism were discussed. 

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%