Fabrication, optimization, and characterization of monolithic semiconductor mode-locked lasers and colliding, pulse mode-locked lasers at millimeter-wave frequencies

Passerini, Marco; Sorel, Marc; Laybourn, P.J.R.; Giuliani, G.; Donati, Silvano

doi:10.1117/12.545801

Cited by 4 publications

(8 citation statements)

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“…In both NAM and non-NAM lasers, a range of relaxation oscillations in the self-pulsation (SP) regime was observed from the recorded RF spectra. In this regime of operation, lasers usually emit broad pulses (several tens of ps) at a frequency lower than the cavity round-trip repetition rate and related to the carrier lifetime in the laser gain section [5, 10]. In our case, the RF peaks associated with the SP regime were in the range of 1-5 GHz (main peak at around 1 GHz).…”

Section: Nm Mode Locked Lasersmentioning

confidence: 81%

“…The CPM regime is characterized by the emission of pulses at a repetition rate that is twice the Fabry-Pérot (FP) cavity round-trip frequency (~2×10 GHz). The CPM configuration is also beneficial as it allows the SA to be positioned away from the laser facets, where it would otherwise facilitate the occurrence of COMD [5]. For some devices, 150 μm non-absorbing mirrors (NAMs) were fabricated at each facet of the laser, as shown in the schematic in Fig.…”

Section: Nm Mode Locked Lasersmentioning

confidence: 99%

“…GaAs/AlGaAs quantum well (QW) ML lasers operate in the 700-850 nm range, with several potential applications such as short-haul optical telecommunications, radio-over-fibre networks [1] and two-photon absorption microscopy [2]. While typical pulse durations are of 2-3 ps at repetition rates of a few 10-100 GHz [3-5], their use is limited by their low average output power, with typical values below 5 mW. As a result, the maximum peak powers rarely exceed 500 mW.…”

Section: Introductionmentioning

confidence: 99%

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Output Power Limitations and Improvements in Passively Mode Locked GaAs/AlGaAs Quantum Well Lasers

Tandoi

Ironside

Marsh

et al. 2012

IEEE J. Quantum Electron.

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Giuseppe Tandoi was born in Bari, Italy, in 1984. He received the M.Sc. degree in Optoelectronics Systems from the Electrical and Electronics Engineering Department at the Politecnico di Bari, Bari, Italy, in 2007. He then worked on the design lateral gratings for distributed feedback quantum cascade lasers operating at 3.34 μm work in collaboration with the School of Engineering at the University of Glasgow. He received his Ph.D. degree in 2010 from the School of Engineering of the University of Glasgow, UK, for its work on monolithic high power passively mode locked GaAs/AlGaAs quantum well lasers. He is currently working on the integration of optoelectronic devices with gasfilled hollow core fibres for the development of miniature atomic clocks and room temperature magnetometers at the School of Engineering of the University of Glasgow, UK, in collaboration with the National Physical Laboratory, London, UK.

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Section: Nm Mode Locked Lasersmentioning

confidence: 81%

Section: Nm Mode Locked Lasersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Output Power Limitations and Improvements in Passively Mode Locked GaAs/AlGaAs Quantum Well Lasers

Tandoi

Ironside

Marsh

et al. 2012

IEEE J. Quantum Electron.

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“…Subpicosecond Colliding Pulse Mode Locking at 126 GHz in Monolithic GaAs/AlGaAs Quantum Well Lasers: Experiments and Theory durations of 2-3 ps at repetition rates of a few 1-100 GHz [3]. Therefore, the output peak powers usually do not exceed 500 mW.…”

mentioning

confidence: 98%

Subpicosecond Colliding Pulse Mode Locking at 126 GHz in Monolithic GaAs/AlGaAs Quantum Well Lasers: Experiments and Theory

Tandoi¹,

Javaloyes

Avrutin

et al. 2013

IEEE J. Select. Topics Quantum Electron.

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In this paper, we present results from monolithic passively mode-locked GaAs/AlGaAs quantum well lasers operating at 830 nm. Colliding pulse mode locking is achieved at repetition rates of 126 GHz with pulsewidths as short as 0.43 ps, an unprecedented value in monolithic semiconductor lasers operating at such high pulse repetition rates. We use a double quantum well laser epistructure with larger mode size d/Г (d is the quantum well thickness and Г is the optical confinement) and investigate the effect of the saturable absorber length on the mode-locking operation. The experimental results are theoretically explained and reproduced using a traveling wave model with an improved timedomain response for both the gain and the absorber sections of the device. The model confirms that the thermally induced spectral detuning of the absorber relative to the gain section determines both the optimal absorber length and the optimal biasing conditions to achieve the shortest pulse duration and highest peak power.Index Terms-Mode-locked (ML) laser, quantum well (QW) laser, semiconductor laser, short pulse generation.

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“…GaAs/AlGaAs ML lasers operate in the 700-850 nm range, with several potential applications such as short-haul optical telecommunications, radio-over-fibre networks [1] and two photon absorption microscopy [2]. However, their use is often limited by their low average output power, with typical values below 5 mW, while typical pulse durations are of 2-3 ps at repetition rates of a few 10-100 GHz [3][4][5]. Therefore, peak powers not exceeding 500 mW are usually achieved.…”

Section: Introductionmentioning

confidence: 99%

Sub-picosecond 9.8W peak power passively mode locked quantum well GaAs/AlGaAs laser

Tandoi

Seunarine

Ironside

et al. 2011

IEEE Photonic Society 24th Annual Meeting

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Fabrication, optimization, and characterization of monolithic semiconductor mode-locked lasers and colliding, pulse mode-locked lasers at millimeter-wave frequencies

Cited by 4 publications

References 0 publications

Output Power Limitations and Improvements in Passively Mode Locked GaAs/AlGaAs Quantum Well Lasers

Output Power Limitations and Improvements in Passively Mode Locked GaAs/AlGaAs Quantum Well Lasers

Subpicosecond Colliding Pulse Mode Locking at 126 GHz in Monolithic GaAs/AlGaAs Quantum Well Lasers: Experiments and Theory

Sub-picosecond 9.8W peak power passively mode locked quantum well GaAs/AlGaAs laser

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