Fabrication, structural and magnetic properties of InAlMnAs and InAlAs:MnAs granular thin films

Yokoyama, Masafumi; Ohya, Shinobu; Tanaka, Masaaki

doi:10.1016/j.jcrysgro.2006.11.290

Cited by 4 publications

(8 citation statements)

References 11 publications

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“…These films are considered as promising material for magneto-optical devices [10], but the nature of the strong magneto-optical effects in them is not clarified. The similar enhancement of the MCD was observed in the In 0.52 Al 0.48 As:MnAs films with 12% content of Mn in the spectral range E = 1.2-2.4 eV [13].…”

Section: Introductionsupporting

confidence: 78%

“…of InMnAs layers earlier, is the most interesting among the obtained results. The resonant band is located in the same spectral region, where the strong bands have been observed in the MO spectra of the GaAs:MnAs [9][10][11][12] and In 0.52 Al 0.48 As:MnAs [13] granular layers containing the MnAs nanoclusters.…”

Section: On the Nature Of The Enhancement Of The Magneto-optical Resp...supporting

confidence: 54%

“…It substantiates the assumption of the plasmon mechanism of the resonant enhancement of the transversal Kerr effect in the InMnAs layers. This mechanism may be the cause of the strong magneto-optical effects observed in other (III, V):MnAs layers at room temperature [9][10][11][12][13].…”

Section: Discussionmentioning

confidence: 96%

“…The physical mechanisms responsible for the strong magneto-optical effects in the (III, V):MnAs granular layers are not ascertained now. Since the enhancement of the magneto-optical effects in the GaAs:MnAs and In 0.52 Al 0.48 As:MnAs layers occurred in the spectral region near to the absorption edge of their semiconductor hosts, the authors [9,13] assumed that the MCD signal coming from the MnAs clusters was enhanced by an optical transition of free carriers at the energy gap of the semiconductor host. The inset in figure 5(a) shows the TKE spectrum for the GaAs:MnAs granular film (X MnAs ≈ 0.03) containing the MnAs clusters with an average diameter of 6 nm [11].…”

Section: On the Nature Of The Enhancement Of The Magneto-optical Resp...mentioning

confidence: 99%

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Resonant enhancement of the transversal Kerr effect in the InMnAs layers

Ганьшина

Golik

Kovalev

et al. 2010

J. Phys.: Condens. Matter

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Spectral dependences of the transversal Kerr effect (TKE) as well as of the real and imaginary parts of the permittivity of InMnAs layers were studied. Pulsed laser ablation of Mn and InAs targets was used to form the layers on GaAs(100) substrates. Spectra of the optical constants and TKE depended substantially on layer fabrication conditions and testified to the presence of MnAs inclusions in the samples. The cross-sectional transmission electron microscopy revealed the presence of inclusions of size 10-40 nm in the layers. At room temperature a strong resonant band was observed in the TKE spectra of the InMnAs layers in the energy range of 0.5-2.2 eV. In this band the TKE was comparable in magnitude but opposite in sign to that in the strong ferromagnetic MnAs. The resonant character of the TKE spectra was explained by excitation of surface plasmons in the MnAs nanoclusters embedded in the InMnAs semiconductor host. Modelling the TKE spectra for (InAs)(1 - X):(MnAs)(X) nanocomposites in the effective-medium approximation (Maxwell-Garnett approximation) confirmed the assumption on the plasmon mechanism of the resonant enhancement of the transversal Kerr effect in the InMnAs layers.

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Section: Introductionsupporting

confidence: 78%

Section: On the Nature Of The Enhancement Of The Magneto-optical Resp...supporting

confidence: 54%

Section: Discussionmentioning

confidence: 96%

Section: On the Nature Of The Enhancement Of The Magneto-optical Resp...mentioning

confidence: 99%

See 2 more Smart Citations

Resonant enhancement of the transversal Kerr effect in the InMnAs layers

Ганьшина

Golik

Kovalev

et al. 2010

J. Phys.: Condens. Matter

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“…(Ga,Mn)As, which have high Curie temperatures of more than 100 K, are well lattice-matched with GaAs substrates, and have process compatibility with GaAs devices. As for magnetic semiconductors grown on InP, the Curie temperatures of (In,Ga,Mn)As [6][7][8][9][10][11], (In,Al,Mn)As [11,12], and InP:Mn [13] were reported to be 130 K, 25 K, and 90 K, respectively. However, their Curie temperatures were found to be much lower than room temperature.…”

mentioning

confidence: 99%

Low‐temperature heteroepitaxial growth of InAlAs layers on ZnSnAs₂/InP(001)

Oomae

Suzuki

Toyota

et al. 2015

Phys. Status Solidi C

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We studied the epitaxial growth of InAlAs on ZnSnAs2 thin films to establish magnetic heterostructures involving ferromagnetic Mn‐doped ZnSnAs2 (ZnSnAs2:Mn) thin films. These heterostructures were successfully grown at temperatures around 300 °C to maintain room‐temperature ferromagnetism in ZnSnAs2:Mn. Reflection high‐energy electron diffraction, X‐ray diffraction measurements and cross‐sectional transmission electron microscopy revealed that the InAlAs layers were pseudomorphically lattice‐matched with ZnSnAs2, even at the low temperature of 300 °C. We attempted to prepare magnetic quantum well structures from the InAlAs/ZnSnAs2:Mn magnetic multilayer structure. We found that InAlAs layers heteroepitaxially grown on ZnSnAs2 and ferromagnetic ZnSnAs2:Mn films are suitable for preparing InP‐based magnetic semiconductor quantum structures. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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