Facile fabrication of complex networks of memristive devices

Abstract

We describe the memristive properties of cluster-assembled gold films. We show that resistive switching is observed in pure metallic nanostructured films at room temperature and atmospheric pressure, in response to applied voltage inputs. In particular, we observe resistance changes up to 400% and archetypal switching events that have remarkable symmetry with the applied voltage. We associated this symmetry with ‘potentiation’ and ‘anti-potentiation’ processes involving the activation of synapses and of pathways comprising multiple synapses. The stability and reproducibility of the resistance switching, which lasted over many hours, make these devices ideal test-beds for exploration of the basic mechanisms of the switching processes, and allow convenient fabrication of devices that may have neuromorphic properties.

Non-ohmic behavior and resistive switching of Au cluster-assembled films beyond the percolation threshold

“…15 Recently, we reported that resistive switching networks can be fabricated by supersonic cluster beam deposition (SCBD) of Au clusters near the percolation threshold. 16 In particular, we have studied the role of substrates in determining the characteristics of the observed switching behavior. 17 Tailoring the conductivity of networks of nanoobjects showing RS is typically achieved by engineering the junctions between the different components and/or by the careful control of the volume fraction of the conducting phase that must be xed close to the electrical percolation threshold.…”

Electromigration-induced resistance switching in indented Al microstrips

“…Later on, Schirm and co-authors [30] used EM to toggle the conductance of an aluminum atomic contact between two well-defined values in the range of a few conductance quanta. More recently, the concept of EM-stimulated resistance switching has been applied to cluster-assembled gold films by Minnai et al [31] and remains a promising approach in current-controlled oxygen doping in YBa 2 Cu 3 O 7−δ [32,33]. Interestingly, the threshold logic implemented by memristive devices permits to emulate synaptic actions in which the memristance of the device can be incrementally modified and a thresholding system governs the firing of the output [34,35].…”

Dynamic Electrical Pathway Tuning in Neuromorphic Nanowire Networks

“…The loss in controllability of synaptic weight at the level of individual memristors is offset by the gain in neuromorphic topology, with the connected network better resembling that of neurobiological systems. [23] Examples of such neuromorphic networks are those formed by atomic switches, [24][25][26][27] nanoparticles, [28][29][30][31][32] or nanowires. [33][34][35] Neuromorphic networks act also as resistive switching devices at the system-level, changing from a high resistance state (HRS) to a low resistance state (LRS) as a result of applying a voltage difference between two terminals across the network.…”