Facilitating charge transfer through an atomic coherent interface of a novel direct Z-scheme BiVO4@Cu3SnS4 heterojunction to boost photocatalytic performance

Chen, Chengcheng; Zhang, Qiaoyu; Zhang, Zhengguo; Fang, Xiaoming

doi:10.1039/d2nr02536a

Nanoscale

2022

DOI: 10.1039/d2nr02536a

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Facilitating charge transfer through an atomic coherent interface of a novel direct Z-scheme BiVO₄@Cu₃SnS₄ heterojunction to boost photocatalytic performance

Chengcheng Chen

Qiaoyu Zhang

Zhengguo Zhang

et al.

Abstract: Direct Z-scheme photocatalytic systems are very promising composite photocatalysts, while their photocatalytic performance is highly associated with the quality of the interface within them. Herein, a novel direct Z-Scheme heterojunction...

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Cited by 8 publications

References 43 publications

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Performance Enhancement of Carbon Nanotube Network Transistors via SbI₃ Inner‐Doping in Selected Regions

Guo,

Wang,

Zhao

et al. 2024

Advanced Materials

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Semiconducting single‐wall carbon nanotubes (s‐SWCNTs) represent one of the most promising materials for surpassing Moore's Law and developing the next generation of electronic devices. Despite numerous developed approaches, reducing the contact resistance of s‐SWCNTs networks remains a significant challenge in achieving further enhancements in electronic performance. In this study, antimony triiodide (SbI3) is efficiently encapsulated within high‐purity s‐SWCNTs films at low temperatures, forming 1D SbI3@s‐SWCNTs vdW heterostructures. The semiconductor–metal transition of individual SbI3@s‐SWCNTs is characterized via sensitive dielectric force microscopy, with the results confirmed through electrical device tests. The electrical behavior transition is attributed to an interlayer charge transfer, as demonstrated by Kelvin probe force microscopy. Moreover, the electrical performance of s‐SWCNTs thin‐film transistors improves significantly with SbI3@s‐SWCNTs networks as contact electrodes. This process reduces the contact resistance between the s‐SWCNTs channel and the electrodes, enhancing electrical performance. Specifically, the contact resistance decreases to one‐third of the original, the carrier mobility increases by ≈10 times, the on‐off ratio exceeds 106, and the subthreshold swing reduces significantly to ≈65 mV dec−1. These results demonstrate the effectiveness of inner‐doping‐induced metallization of s‐SWCNTs in the contact region, essential for advancing carbon nanotube electronic devices and circuits.

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Performance Enhancement of Carbon Nanotube Network Transistors via SbI₃ Inner‐Doping in Selected Regions

Guo,

Wang,

Zhao

et al. 2024

Advanced Materials

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Coherent Sub‐Nanometer Interface between Crystalline and Amorphous Materials Boosts Electrochemical Synthesis of Hydrogen Peroxide

Bao

Yao

Zhu

et al. 2023

Small

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There are enormous yet largely underexplored exotic phenomena and properties emerging from interfaces constructed by diverse types of components that may differ in composition, shape, or crystal structure. It remains poorly understood the unique properties a coherent interface between crystalline and amorphous materials may evoke, and there lacks a general strategy to fabricate such interfaces. It is demonstrated that by topotactic partial oxidation heterostructures composed of coherently registered crystalline and amorphous materials can be constructed. As a proof‐of‐concept study, heterostructures consisting of crystalline P3N5 and amorphous P3N5Ox can be synthesized by creating amorphous P3N5Ox from crystalline P3N5 without interrupting the covalent bonding across the coherent interface. The heterostructure is dictated by nanometer‐sized short‐range‐ordered P3N5 domains enclosed by amorphous P3N5Ox matrix, which entails simultaneously fast charge transfer across the interface and bicomponent synergistic effect in catalysis. Such a P3N5/P3N5Ox heterostructure attains an optimal adsorption energy for *OOH intermediates and exhibits superior electrocatalytic performance toward H2O2 production by adopting a selectivity of 96.68% at 0.4 VRHE and a production rate of 321.5 mmol h−1 gcatalyst−1 at −0.3 VRHE. The current study provides new insights into the synthetic strategy, chemical structure, and catalytic property of a sub‐nanometer coherent interface formed between crystalline and amorphous materials.

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Charge Steering in Heterojunction Photocatalysis: General Principles, Design, Construction, and Challenges

Eshete

et al. 2023

Small Science

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Steering charge kinetics is a key to optimizing quantum efficiency. Advancing the design of photocatalysts (ranging from single semiconductor to multicomponent semiconductor junctions) that promise improved photocatalytic performance for converting solar to chemical energy, entails mastery of increasingly more complicated processes. Indeed, charge kinetics become more complex as both charge generation and charge consumption may occur simultaneously on different components, generally with charges being transferred from one component to another. Capturing detailed charge dynamics information in each heterojunction would provide numerous significant benefits for applications and has been needed for a long time. Here, the steering of charge kinetics by modulating charge energy states in the design of semiconductor–metal‐interface‐based heterogeneous photocatalysts is focused. These phenomena can be delineated by separating heterojunctions into classes exhibiting either Schottky/ohmic or plasmonic effects. General principles for the design and construction of heterojunction photocatalysts, including recent advances in the interfacing of semiconductors with graphene, carbon quantum dots, and graphitic carbon nitride are presented. Their limitations and possible future outlook are brought forward to further instruct the field in designing highly efficient photocatalysts.

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Facilitating charge transfer through an atomic coherent interface of a novel direct Z-scheme BiVO₄@Cu₃SnS₄ heterojunction to boost photocatalytic performance

Abstract: Direct Z-scheme photocatalytic systems are very promising composite photocatalysts, while their photocatalytic performance is highly associated with the quality of the interface within them. Herein, a novel direct Z-Scheme heterojunction...

Cited by 8 publications

References 43 publications

Performance Enhancement of Carbon Nanotube Network Transistors via SbI₃ Inner‐Doping in Selected Regions

Performance Enhancement of Carbon Nanotube Network Transistors via SbI₃ Inner‐Doping in Selected Regions

Coherent Sub‐Nanometer Interface between Crystalline and Amorphous Materials Boosts Electrochemical Synthesis of Hydrogen Peroxide

Charge Steering in Heterojunction Photocatalysis: General Principles, Design, Construction, and Challenges

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Facilitating charge transfer through an atomic coherent interface of a novel direct Z-scheme BiVO4@Cu3SnS4 heterojunction to boost photocatalytic performance

Abstract: Direct Z-scheme photocatalytic systems are very promising composite photocatalysts, while their photocatalytic performance is highly associated with the quality of the interface within them. Herein, a novel direct Z-Scheme heterojunction...

Cited by 8 publications

References 43 publications

Performance Enhancement of Carbon Nanotube Network Transistors via SbI3 Inner‐Doping in Selected Regions

Performance Enhancement of Carbon Nanotube Network Transistors via SbI3 Inner‐Doping in Selected Regions

Coherent Sub‐Nanometer Interface between Crystalline and Amorphous Materials Boosts Electrochemical Synthesis of Hydrogen Peroxide

Charge Steering in Heterojunction Photocatalysis: General Principles, Design, Construction, and Challenges

Contact Info

Product

Resources

About

Facilitating charge transfer through an atomic coherent interface of a novel direct Z-scheme BiVO₄@Cu₃SnS₄ heterojunction to boost photocatalytic performance

Performance Enhancement of Carbon Nanotube Network Transistors via SbI₃ Inner‐Doping in Selected Regions

Performance Enhancement of Carbon Nanotube Network Transistors via SbI₃ Inner‐Doping in Selected Regions