Failure Analysis of FeCAPs. Electrical Behaviour Under Synchrotron X-Ray Irradiation

J. Phys.: Condens. Matter

Батурин

et al. 2005

Highly brilliant synchrotron x-ray radiation was used to measure in situ the microstructural response of a ferroelectric capacitor subjected to bipolar rectangular pulses. High-resolution x-ray diffraction experiments were performed on a (111)-oriented PbZr0.45Ti0.55O3 thin film with a composition in the morphotropic region and sandwiched between two platinum electrodes. From original real time measurements, the microstructural changes with electrical cycling have been evidenced and correlated with the observed polarization fatigue measured during the x-ray diffraction experiment. From concomitant variations of the diffracted intensity and the switching current maximum, several mechanisms have been discussed as a possible origin of the polarization fatigue: field induced phase transformation, oxygen vacancy self-ordering and widening of the internal bulk screening field distribution function during cyclic switching.

Section: Fatigue Mechanismssupporting

confidence: 87%

Section: Fatigue Mechanismssupporting

confidence: 84%

Section: Fatigue Mechanismsmentioning

confidence: 99%

See 1 more Smart Citation

In situsynchrotron x-ray diffraction study of electrical field induced fatigue in Pt/PbZr_0.45Ti_0.55O₃/Pt ferroelectric capacitors

J. Phys.: Condens. Matter

Батурин

et al. 2005

“…[13][14][15][16] Consequently, the forthcoming sections will address detailed ex situ and in situ analyzes of the electrical behavior under irradiation of the SBT-based Fe-CAPs.…”

Section: B Effect Of the Remnant Polarization State Upon Diffracted mentioning

confidence: 99%

Degradation and recovery of polarization under synchrotron x rays in SrBi2Ta2O9 ferroelectric capacitors

Castagnos

Journal of Applied Physics

et al. 2005

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Articles you may be interested inPolarization fatigue in Pb Zr 0.45 Ti 0.55 O 3 -based capacitors studied from high resolution synchrotron x-ray diffraction J. Appl. Phys. 97, 064108 (2005); Room temperature aging behavior of thermally imprinted Pt/SrBi 2 Ta 2 O 9 /Pt ferroelectric thin film capacitors Elementary Pt/ SrBi 2 Ta 2 O 9 / Pt ferroelectric capacitors have been structurally characterized by x-ray diffraction using highly brilliant synchrotron radiation. A microstructural analysis of the stacked layers was performed from the collection of high-quality one-dimensional and two-dimensional diffraction patterns. During x-ray diffraction experiments, peculiar electrical behaviors under irradiation were evidenced. Indeed, depending upon their initial state ͑poled or nonpoled͒, the capacitors have exhibited drastic changes in their electrical characteristics after or under irradiation, both "fatiguelike" ͑polarization reduction͒ and/or "imprintlike" ͑voltage shift͒ phenomena being observed. Using a sample environment specially designed to measure in situ the evolutions of ferroelectric characteristics, the kinetics of both degradation and restoration of ferroelectric properties of the SrBi 2 Ta 2 O 9 -based capacitors under x-ray radiation have been analyzed. Reduction and recovery of switchable polarization have been explained in terms of interaction between ferroelectric domain configuration and photoinduced charge carriers. Mechanisms of charge trapping proposed in the literature are discussed to explain aging and rejuvenation.[This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 216.165.95.69 On: Mon, 08 Dec 2014 06:50:08 044106-2 Menou et al. J. Appl. Phys. 97, 044106 ͑2005͒ [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 216.165.95.69 On: Mon, 08 Dec 2014 06:50:08 044106-3 Menou et al. J. Appl. Phys. 97, 044106 ͑2005͒ [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 216.165.95.69 On: Mon, 08 Dec 2014 06:50:08 044106-4 Menou et al. J. Appl. Phys. 97, 044106 ͑2005͒ [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 216.165.95.69 On: Mon, 08 Dec 2014 06:50:08 044106-5 Menou et al. J. Appl. Phys. 97, 044106 ͑2005͒ [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 216.165.95.69 On: Mon, 08 Dec 2014 06:50:08 044106-6 Menou et al. J. Appl. Phys. 97, 044106 ͑2005͒ [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: ...

Polarization fatigue in PbZr0.45Ti0.55O3-based capacitors studied from high resolution synchrotron x-ray diffraction

Journal of Applied Physics

Батурин

et al. 2005

High resolution synchrotron x-ray diffraction experiments were performed on (111)-oriented PbZr0.45Ti0.55O3-based capacitors with a composition in the morphotropic region. Diffraction analyzes were done after bipolar pulses were applied and removed, representing several places in the cyclic switching. Microstructural changes were evidenced from relative diffracted intensities variations of several Bragg reflections and a correlation with the evolution of the ferroelectric responses has been established. First, a peculiar microstructural evolution was observed during the first 3×104 switching cycles and was attributed to the so-called “wake-up” effect. On the other hand, the onset of the fatigue phenomenon was accompanied by significant variations on integrated diffraction intensities. Several mechanisms are proposed and discussed to explain such variations. Finally, the ferroelectric responses were analyzed after x-ray diffraction experiments and compared with those measured before exposure. A detailed analysis has shown that both domain configuration and switching process are strongly influenced by x-ray irradiation. It can be considered that x rays act as a “revealer” of the domain structure created during the preceding electrical treatment.