Fast 5d → 4f luminescence of Pr3+ in Lu2SiO5 single crystal host

Nikl, M.; Yoshikawa, Akira; Mihóková, E.; Pejchal, Jan; Beitlerová, A.; Novoselov, A.; Fukuda, Tsuguo

doi:10.1016/j.cplett.2005.04.115

Cited by 90 publications

(63 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…It is observed that the Lu 0.8 Sc 0.2 BO 3 :0.5 at%Pr 3+ crystals display one absorption band in the range from 210 to 250 nm. The similar absorption band can be also seen in Lu 2 Si 2 O 7 :Pr 3+ [20] and LuAG:Pr 3+ crystals [21], which belongs to the 4f 2 → 4f 1 5d transitions of Pr 3+ . The dispersion of the on-set of the cut-off edge locates at 250 nm, which has obviously blue-shift comparing to the value of LuAG:Pr 3+ crystal round 300 nm [22] and similar with the value of Lu 2 Si 2 O 7 :Pr 3+ [23].…”

Section: Optical Characteristicssupporting

confidence: 61%

See 1 more Smart Citation

Growth and luminescence characteristics of Pr3+-doped Lu0.8Sc0.2BO3 single crystal

Ding

Pan

et al. 2011

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Section: Optical Characteristicssupporting

confidence: 61%

“…This advantage makes the praseodymium-doped scintillators have always been the concern of researchers until now [20][21][22]. However, to our knowledge, there is no report about the luminescence characteristics of praseodymium doped lutetium scandium orthoborate crystal.…”

Section: Introductionmentioning

confidence: 83%

Growth and luminescence characteristics of Pr3+-doped Lu0.8Sc0.2BO3 single crystal

Ding

Pan

et al. 2011

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…are not inconsistent with the spontaneous radiative emission rates derived from equation (4). However, there is also a possibility that the Ce 3+ emission is already quenched even at very low temperature.…”

Section: +supporting

confidence: 51%

“…Besides Ce 3+ , there are also efforts to introduce the Pr 3+ ion as an optically active dopant [4]. Theoretically, the 5d → 4f emission in Pr 3+ should be a factor of two to three faster than in Ce 3+ due to the higher energy of the 5d → 4f emission of Pr 3+ compared to Ce 3+ [5].…”

Section: Introductionmentioning

confidence: 99%

Thermal quenching of Ce³⁺emission in PrX₃(X = Cl, Br) by intervalence charge transfer

Birowosuto

Dorenbos

Eijk

et al. 2007

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

The cause of the relatively low scintillation light yield of PrBr 3 :Ce 3+ is investigated by means of optical spectroscopy, the temperature dependence of scintillation properties and the temperature dependence of optically excited decay curves of undoped and Ce 3+ -doped PrCl 3 and PrBr 3 . The integrated intensity of x-ray excited luminescence of PrBr 3 :5% Ce 3+ shows that the light yield at room temperature (RT) is two times less than at 80 K. The decay time of Ce 3+ emission optically excited to its 5d band in PrBr 3 :5% Ce 3+ has a single exponential decay of 11.0 ± 1.1 and 6.0 ± 0.6 ns at 10 K and RT, respectively. It is proposed that Ce 3+ emission is quenched by a metal-to-metal charge transfer of Ce 3+ + Pr 3+ → Ce 4+ + Pr 2+ followed by 4f → 4f emission of Pr 3+ which is strongly concentration quenched.

show abstract

“…The parameters obtained for ν , 0 , and E TQ are listed in columns 8, 9, and 10 of Table I. For comparison with E TQ in other Pr 3+ -doped compounds exploited in the scintillator area, the unit of E TQ is reported in electronvolts [27,28]. E TQ increases up to x = 2 and then decreases with increasing Ga content, following the same tendency of the Ga content dependence of quenching temperature.…”

Section: Temperature Quenching Behaviormentioning

confidence: 99%

Thermal ionization and thermally activated crossover quenching processes for5d−4fluminescence inY3Al
Ueda
¹
,
Meijerink
²
,
Dorenbos
³

et al. 2017
Phys. Rev. B
75
2
42
0
View full text Add to dashboard Cite

We investigated thermally activated ionization and thermally activated crossover as the two possibilities of quenching of 5d luminescence in Pr 3+ -doped Y 3 Al 5−x Ga x O 12 . Varying the Ga content x gives the control over the relative energy level location of the 5d and 4f 2 :3 PJ states of Pr 3+ and the host conduction band (CB). Temperature-dependent luminescence lifetime measurements show that the 5d luminescence quenching temperature T 50% increases up to x = 2 and decreases with further increasing Ga content. This peculiar behavior is explained by a unique transition between the two quenching mechanisms which have an opposite dependence of thermal quenching on Ga content. For low Ga content, thermally activated crossover from the 4f 5d state to the 4f 2 ( 3 PJ ) states is the operative quenching mechanism. With increasing Ga content, the activation energy for thermally activated crossover becomes larger, as derived from the configuration coordinate diagram, while from the vacuum referred binding energy diagram the activation energy of thermal ionization becomes smaller. Based on these results, we demonstrated that the thermal quenching of Pr 3+ : 5d 1 -4f luminescence in Y 3 Al 5−x Ga x O 12 with x = 0, 1, 2 is a thermally activated crossover while for x = 3, 4, 5 it results from the thermal ionization.

show abstract

Fast 5d → 4f luminescence of Pr3+ in Lu2SiO5 single crystal host

Cited by 90 publications

References 12 publications

Growth and luminescence characteristics of Pr3+-doped Lu0.8Sc0.2BO3 single crystal

Growth and luminescence characteristics of Pr3+-doped Lu0.8Sc0.2BO3 single crystal

Thermal quenching of Ce³⁺emission in PrX₃(X = Cl, Br) by intervalence charge transfer

Thermal ionization and thermally activated crossover quenching processes for5d−4fluminescence inY3Al
Ueda
¹
,
Meijerink
²
,
Dorenbos
³

et al. 2017
Phys. Rev. B
75
2
42
0
View full text Add to dashboard Cite

Contact Info

Product

Resources

About

Fast 5d → 4f luminescence of Pr3+ in Lu2SiO5 single crystal host

Cited by 90 publications

References 12 publications

Growth and luminescence characteristics of Pr3+-doped Lu0.8Sc0.2BO3 single crystal

Growth and luminescence characteristics of Pr3+-doped Lu0.8Sc0.2BO3 single crystal

Thermal quenching of Ce3+emission in PrX3(X = Cl, Br) by intervalence charge transfer

Thermal ionization and thermally activated crossover quenching processes for5d−4fluminescence inY3AlUeda1, Meijerink2, Dorenbos3 et al. 2017Phys. Rev. B752420View full textAdd to dashboardCite

Contact Info

Product

Resources

About

Thermal quenching of Ce³⁺emission in PrX₃(X = Cl, Br) by intervalence charge transfer

Thermal ionization and thermally activated crossover quenching processes for5d−4fluminescence inY3Al
Ueda
¹
,
Meijerink
²
,
Dorenbos
³

et al. 2017
Phys. Rev. B
75
2
42
0
View full text Add to dashboard Cite