Fast and blister-free irradiation conditions for cross-linking of PMMA induced by 2MeV protons

Unai, Somrit; Puttaraksa, Nitipon; Pussadee, N; Singkarat, Kanda; Rhodes, M.W.; Whitlow, Harry J.; Singkarat, S.

doi:10.1016/j.mee.2012.05.010

Cited by 10 publications

(7 citation statements)

References 16 publications

(11 reference statements)

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“…An important aspect of this patterning method is the necessity of providing a path for the volatile decomposition products to leave the sample. Numerous studies showed that, in a situation where such a path is not available or not efficient, accumulation of the volatile products in the bulk and at the surface can result in material swelling [9] or even in heavy surface damage, such as blistering and delamination [17]. Neither swelling nor blistering have been observed in our samples, and we explain this difference in the results by a combination of several factors.…”

Section: Resultsmentioning

confidence: 53%

Height patterning of nanostructured surfaces with a focused helium ion beam: a precise and gentle non-sputtering method

et al. 2020

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This work presents a new technique for surface patterning with focused ion beams. The technique is based on chemical decomposition in the bulk of a polymer substrate with negligible surface sputtering effects. By using a focused helium ion beam, generated in a helium ion microscope, we show that the surface height of polymethyl methacrylate substrates can be patterned with nanometer depth precision, while preserving the essential features of the nanostructures prefabricated on this surface. The key factors that control this patterning process are discussed.

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Section: Resultsmentioning

confidence: 53%

Height patterning of nanostructured surfaces with a focused helium ion beam: a precise and gentle non-sputtering method

et al. 2020

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“…The irradiation environments for PMMA thin films to induce crosslinking in the polymeric chains have been improved by irradiating it with 2 MeV proton beam while preserving the exposed area free of blister [26]. Figure 4 shows an schematic illustration summarize the most important methods of cross-linking for PMMA polymer.…”

Section: Cross-linking By Means Of Radiationmentioning

confidence: 99%

Role of Cross-Linking Process on the Performance of PMMA

Albeladi¹,

Al-Romaizan²,

Hussein³

2017

IJBSBE

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In order to encounter the necessities of the application, cross-linking of poly(methyl methacrylate) (PMMA) has been emerged and become an interesting issue, due to the unsatisfied results that result by the neat poly(methyl methacrylate) itself. Numerous facets make cross-linked PMMA superior and preferred than uncross polymer like the enhanced heat performance, the outstanding mechanical properties, its chemical resistance and good abrasion resistance. UV radiation, Cross-linking by free radical, small-molecule cross-linking, and condensation are discoursed concisely in the following review, also the effects of cross-linker on polymer properties are discussed. Importantly, present the review discusses the different important applications of cross-linked PMMA.

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“…Low-temperature negative-tone PMMA was found to suffer from an extensive swelling due to trapped gaseous scission products around 70 K that also reduced the etch selectivity in this temperature regime in a drastic way 11 . Low-temperature writing of PMMA also requires a two-step lithography technique to prevent it from peeling when trapped gases burst out 10,32 . In the case of CSAR 62 we did not observe such structural damage for structures written at low-temperatures, which makes it much more suitable for low temperature EBL.…”

Section: Resultsmentioning

confidence: 99%

CSAR 62 as negative-tone resist for high-contrast e-beam lithography at temperatures between 4 K and room temperature

Kaganskiy¹,

Heuser²,

Schmidt³

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The temperature dependence of the electron-beam sensitive resist CSAR 62 is investigated in its negative-tone regime. The writing temperatures span a wide range from 4 K to room temperature with the focus on the liquid helium temperature regime. The importance of low temperature studies is motivated by the application of CSAR 62 for deterministic nanophotonic device processing by means of in-situ electron-beam lithography. At low temperature, CSAR 62 exhibits a high contrast of 10.5 and a resolution of 49 nm. The etch stability is almost temperature independent and it is found that CSAR 62 does not suffer from peeling which limits the low temperature application of the standard electron-beam resist PMMA. As such, CSAR 62 is a very promising negative-tone resist for in-situ electron-beam lithography of high quality nanostructures at low temperature.

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Fast and blister-free irradiation conditions for cross-linking of PMMA induced by 2MeV protons

Cited by 10 publications

References 16 publications

Height patterning of nanostructured surfaces with a focused helium ion beam: a precise and gentle non-sputtering method

Height patterning of nanostructured surfaces with a focused helium ion beam: a precise and gentle non-sputtering method

Role of Cross-Linking Process on the Performance of PMMA

CSAR 62 as negative-tone resist for high-contrast e-beam lithography at temperatures between 4 K and room temperature

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