Fatigue-free ferroelectric capacitors with platinum electrodes

Araujo, C. A-Paz de; Cuchiaro, J. D.; McMillan, L. D.; Scott, M.; Scott, J. F.

doi:10.1038/374627a0

Cited by 2,597 publications

(1,110 citation statements)

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“…In addition, nonvolatility is important since high-performance and high-density non-volatile memory devices should be integrated with consumer electronic devices (for example, mobile phones, digital cameras, potable media players, laptop computers, etc.). Therefore, tremendous effort has been made toward the development of high-density, low-cost, and nonvolatile solid-state storage devices [17][18][19][20][21][22][23][24][25][26][27][28]. Among the many types of non-volatile memory technology, flash memory devices based on the floating gate have been widely used due to their massive memory capacity, which has been required for many applications [17,[19][20][21]23].…”

Section: Introductionmentioning

confidence: 99%

Recent progress in gold nanoparticle-based non-volatile memory devices

Jang‐Sik

2010

Gold Bull

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Recently, much progress has been made toward the fabrication of non-volatile memory devices based on metallic nanoparticles. Among the many kinds of nanoparticles, gold nanoparticles are some of the most widely used materials for charge trapping elements in non-volatile memory devices because they are chemically stable, easily synthesized, and have a high work function. Various synthesis methods have been applied to fabricate gold nanoparticle-based nonvolatile memory devices and recent progress indicates that gold is a very promising material for non-volatile memory applications. In this article, the recent advances in fabrication and characterization of gold nanoparticle-based nonvolatile memory devices, with an emphasis on flash memory-type memory devices, are reviewed. Detailed device fabrication, characterization, and future directions are reported based on the recent research activities and literature.

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Section: Introductionmentioning

confidence: 99%

Recent progress in gold nanoparticle-based non-volatile memory devices

Jang‐Sik

2010

Gold Bull

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“…Bismuthlayered ferroelectrics are considered to be candidate materials for nonvolatile random access memory (NVFRAM) applications due to their low coercive field and leakage current, long retention, minimal tendency to imprint and little fatigue with usual platinum electrode [1,2]. Bismuth titanate is composed of a triple perovskite unit sandwiched between (Bi 2 O 2 ) 2+ layers.…”

Section: Introductionmentioning

confidence: 99%

Piezoelectric properties of Bi4Ti3O12 thin films annealed in different atmospheres

Simões

Riccardi

González

et al. 2007

Materials Research Bulletin

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Bismuth titanate (Bi 4 Ti 3 O 12 -BIT) films were evaluated for use as lead-free piezoelectric thin-films in micro-electromechanical systems. The films were grown by the polymeric precursor method on Pt/Ti/SiO 2 /Si (1 0 0) (Pt) bottom electrodes at 700 8C for 2 h in static air and oxygen atmospheres. The domain structure was investigated by piezoresponse force microscopy (PFM). Annealing in static air leads to better ferroelectric properties, higher remanent polarization, lower drive voltages and higher piezoelectric coefficient. On the other hand, oxygen atmosphere favors the imprint phenomenon and reduces the piezoelectric coefficient dramatically. Impedance data, represented by means of Nyquist diagrams, show a dramatic increase in the resistivity for the films annealed in static air atmopshere. #

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“…65 Bi 2 O 2 planes have a key role in device performance as ferroelectric memories: Fatigue (decrease in switched charge with repetitive polarization reversals) arises largely from oxygen vacancies in ABO 3 perovskite ferroelectrics such as BaTiO 3 or PbTiO 3 , but in the Aurivilius phase materials the oxygen vacancies occur primarily in the Bi 2 O 2 planes, where they have negligible effect on the polarization of Ti-O or Nb-O or Ta-O covalent bonds. 66,67 Magnetoelectric Aurivilius phases. The realization that magnetic ions could be substituted into Aurivilius-phase ferroelectrics came independently from several sources, but it was ambiguous in these studies whether the magnetism M arose from small minor phases; even a tiny percentage by weight could produce the measured values of M. Keeney et al 68 have carried out careful measurements on an n ¼ 5 Aurivilius structure in which the B-site in each perovskite block is 70% filled with Fe and 30% with Co: they find that Figure 11).…”

Section: Aurivilus-phase Ferrites Cobaltates and Manganitesmentioning

confidence: 99%

Room-temperature multiferroic magnetoelectrics

2013

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A short review is given of the recent work on single-phase crystals that are ferroelectric and ferromagnetic at or near room temperature. BiFeO 3 is mentioned only briefly, because it has been reviewed in detail elsewhere very recently; emphasis instead is on copper oxide, perovskite oxides with mixed B-site occupancy (such as Pb(Fe 1/2 Ta 1/2 ) x (Zr y Ti INTRODUCTIONMultiferroics are usually defined as single-phase crystals exhibiting at the same temperature and pressure both ferromagnetism (or antiferromagnetism) and ferroelectricity (or antiferroelectricity). As most ferroelectrics are also ferroelastic 1 (hysteretic stress-strain relationships), the 'multi-ferro' label often includes three coupled order parameters. (As a peripheral comment, we note that it is necessary and sufficient 2 for a ferroelectric to be ferroelastic if its phase transition changes the crystal class-for example, from orthorhombic to tetragonal-treating hexagonal and trigonal as a single super-class. Examples of nonferroelastic ferroelectrics include KTiOPO 4 and LiNbO 3 , whose ferroelectric transitions are, respectively, orhorhombic-orthorhombic and trigonal-trigonal.)The interest in multiferroics at present is growing rapidly, and the interest is twofold: from a fundamental point of view the coupling between spins and lattices in crystals-between magnetism and ferroelectricity and/or structural phase transitions-has been recognized as complex and fascinating for several decades, generally requiring low-symmetry materials that were carefully avoided in earlier days of solid state theory. A good reason why it is presented in the elegant work by Schmid and Trooster 3 on the boracites: These materials (for example, nickel-iodine boracite) are multiferroic only at cryogenic temperatures and grow in needle-like structures, making them impractical for commercial device applications; and theoretically they exhibit low symmetry (monoclinic or triclinic) and have as many as 96 atoms per unit cell, making them theoretically formidable. Despite these drawbacks, multiferroics present a possible avenue for the next generation of computer digital memories, combining at least in principle, the high-speed and low-power consumption 4,5 of a ferroelectric random access memory (FRAM) with the nondestructive READ operation of a magnetic RAM. We discuss below why these goals will not be easy to achieve in commercial products:The most serious problems are operational temperature (most multiferroics operate well below ambient) and magnitudes of magnetization (all multiferroics with reasonably high operating temperatures are weak ferromagnets-canted antiferromagnetswhereas a strong ferromagnet is desired), and the switched polarization is also extremely weak. The polarization in most multiferroics is so weak that authors measure it in nC m À2 rather than the older customary mC cm À2 . Keep in mind that equally good SI units would be C hectare À1 for these multiferroics, a value far lower than the roughly 1 mC cm À2 required by a computer memory sense ampl...

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Fatigue-free ferroelectric capacitors with platinum electrodes

Cited by 2,597 publications

References 17 publications

Recent progress in gold nanoparticle-based non-volatile memory devices

Recent progress in gold nanoparticle-based non-volatile memory devices

Piezoelectric properties of Bi4Ti3O12 thin films annealed in different atmospheres

Room-temperature multiferroic magnetoelectrics

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