Fe‐Doped p‐ZnO Nanostructures/n‐GaN Heterojunction for “Blue‐Free” Orange Light‐Emitting Diodes

Zhao, Wanqiu; Xiong, Xiaoli; Han, Yibo; Wen, Li; Zou, Zhengguang; Luo, Shijun; Li, Haixia; Su, Jun; Zhai, Tianyou; Gao, Yihua

doi:10.1002/adom.201700146

Cited by 29 publications

(11 citation statements)

References 40 publications

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“…[21] The built-in potential energy qV 0 between n-GaN and Ti 3 C 2 T X is determined to be 0.37 eV by subtracting the secondary electron cut-off energy of Ti 3 C 2 T X /n-GaN (16.97 eV) from the secondary electron cut-off energy of n-GaN (17.34 eV). Since the band gap E g of n-GaN is 3.39 eV, [34] the Schottky barrier height Φ b between Ti 3 C 2 T X and n-GaN can be calculated to be 0.68 eV. The energy band diagram of the equilibrium state of Ti 3 C 2 T X /n-GaN Schottky junction in dark is shown in Figure 4b.…”

Section: Resultsmentioning

confidence: 99%

MXene‐GaN van der Waals Heterostructures for High‐Speed Self‐Driven Photodetectors and Light‐Emitting Diodes

Chen

Kang

et al. 2021

Adv Elect Materials

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lithium-ion batteries, [12,13] and electromagnetic interference shielding. [14,15] In addition to these above-mentioned applications, the excellent performance of MXenes makes them ideal for the research in MXene-semiconductor devices. [16] To be specific, MXenes colloidal solution can be fabricated into high-quality thin film through simple methods, such as drop casting and spin-coating, [17,18] thus simplifying the fabrication process of the devices. Besides, MXenes thin film possesses high transmittance and low sheet resistance, [19] which benefits their applications in photodetectors and LEDs. Moreover, the work function of MXene is adjustable in a large range from 2.14 to 5.65 eV, [20,21] which allows it to form Schottky junctions with different semiconductor materials, thereby broadening its application situations.So far, van der Waals heterostructures formed by other 2D materials (such as graphene and TMDs) and conventional semiconductor materials have been investigated widely in various fields and exhibits excellent characteristics. [22][23][24] However, van der Waals heterostructures fabricated by MXene and semiconductor materials have rarely been investigated so far and still need further study. Moreover, as an ideal candidate for optoelectronic devices, GaN has been widely used in photodetectors and LEDs. [25][26][27][28] In this work, Ti 3 C 2 T X /(n/p)-GaN van der Waals heterostructures were fabricated and studied. Ultraviolet photoelectron spectroscopy (UPS) confirms that Ti 3 C 2 T X can form Schottky contacts with both n-GaN and p-GaN at room temperature. By taking the advantages of the Ti 3 C 2 T X /(n/p)-GaN Schottky junctions, we fabricated high-speed photodetectors and stable orange LEDs, respectively. Under the illumination of a 365 nm light source with an intensity of 96.9 µW cm −2 , the Ti 3 C 2 T X /n-GaN photodetector shows a short rise time (60 ms) and decay time (20 ms), a high responsivity (44.3 mA W −1 ) and on/off ratio (≈11 300). And the Ti 3 C 2 T X /p-GaN LED device remains stable orange light emission under bias voltage from 4 to 22 V. We believe that this work gives an essential strategy for photodetectors and LEDs by taking the advantages of MXenes. Due to their excellent electrical conductivity, high transmittance, and adjustable work function, 2D transition-metal carbides and nitrides have shown great promise in optoelectronic applications, especially in MXenesemiconductor devices. In this work, Ti 3 C 2 T X /(n/p)-GaN van der Waals heterostructures are fabricated and studied. The Ti 3 C 2 T X /(n/p)-GaN Schottky junctions are confirmed by ultraviolet photoelectron spectroscopy (UPS) with a work function ≈4.2 eV of Ti 3 C 2 T X . Based on the Ti 3 C 2 T X /(n/p)-GaN Schottky junctions, high-speed photodetectors and stable orange light emitting diodes (LEDs) are fabricated. The Ti 3 C 2 T X /n-GaN heterostructure photodetector shows a short rise time (60 ms) and decay time (20 ms), a high responsivity (44.3 mA W −1 ) and on/off ratio (≈11300) under a light source of 365 nm wa...

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Section: Resultsmentioning

confidence: 99%

MXene‐GaN van der Waals Heterostructures for High‐Speed Self‐Driven Photodetectors and Light‐Emitting Diodes

Chen

Kang

et al. 2021

Adv Elect Materials

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“…This applies to both the nature and quantity of defects that are present. A semiconducting metal oxide, ZnO, finds applications as a transparent conducting oxide for solar cells, 1, 2 piezoelectric for various electronic devices, 3 transparent thin film for gas sensors, 4,5 nanowire-based gas sensor for NOx or H2, 6 UV optical emitter in LEDs, [7][8][9] and dilute magnetic semiconductor for spintronics. 10,11 The presence of lattice defects is known to impact the performance of ZnO in most of these application fields.…”

Section: Introductionmentioning

confidence: 99%

Defect-related multicolour emissions in ZnO smoke: from violet, over green to yellow

et al. 2019

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“…In recent years, photoelectric devices have been widely investigated [ 1 – 3 ], especially detectors with different morphologies and sizes, for exploring their mechanisms, simplifying their syntheses, and improving device efficiencies [ 4 – 10 ]. Photodetectors based on hybrid organolead trihalide perovskite CH 3 NH 3 PbX 3 (MAPbX 3 , X = Cl, Br, I) have attracted significant attention in the optoelectronic field owing to their strong absorption coefficients (up to 10 5 cm −1 ) [ 11 – 14 ], carrier mobilities (2.5–1000 cm 2 v −1 s −1 ) [ 15 – 19 ], long carrier lifetimes (0.08–4.5 μs) [ 17 , 19 – 21 ], and diffusion lengths (2–175 μm) [ 19 , 20 , 22 , 23 ].…”

Section: Introductionmentioning

confidence: 99%

Formamidinium Lead Bromide (FAPbBr3) Perovskite Microcrystals for Sensitive and Fast Photodetectors

et al. 2018

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Because of the good thermal stability and superior carrier transport characteristics of formamidinium lead trihalide perovskite HC(NH2)2PbX3 (FAPbX3), it has been considered to be a better optoelectronic material than conventional CH3NH3PbX3 (MAPbX3). Herein, we fabricated a FAPbBr3 microcrystal-based photodetector that exhibited a good responsivity of 4000 A W−1 and external quantum efficiency up to 106% under one-photon excitation, corresponding to the detectivity greater than 1014 Jones. The responsivity is two orders of magnitude higher than that of previously reported formamidinium perovskite photodetectors. Furthermore, the FAPbBr3 photodetector’s responsivity to two-photon absorption with an 800-nm excitation source can reach 0.07 A W−1, which is four orders of magnitude higher than that of its MAPbBr3 counterparts. The response time of this photodetector is less than 1 ms. This study provides solid evidence that FAPbBr3 can be an excellent candidate for highly sensitive and fast photodetectors.Electronic supplementary materialThe online version of this article (10.1007/s40820-018-0196-2) contains supplementary material, which is available to authorized users.

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Fe‐Doped p‐ZnO Nanostructures/n‐GaN Heterojunction for “Blue‐Free” Orange Light‐Emitting Diodes

Cited by 29 publications

References 40 publications

MXene‐GaN van der Waals Heterostructures for High‐Speed Self‐Driven Photodetectors and Light‐Emitting Diodes

MXene‐GaN van der Waals Heterostructures for High‐Speed Self‐Driven Photodetectors and Light‐Emitting Diodes

Defect-related multicolour emissions in ZnO smoke: from violet, over green to yellow

Formamidinium Lead Bromide (FAPbBr3) Perovskite Microcrystals for Sensitive and Fast Photodetectors

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