Feasibility study of Cu paste printing technique to fill deep via holes for low cost 3D TSV applications

The through-silicon-vias (TSVs) process is a vital technology in microelectromechanical systems (MEMS) packaging. The current via filling technique based on copper electroplating has many shortcomings, such as involving multi-step processes, requiring sophisticated equipment, low through-put and probably damaging the MEMS devices susceptible to mechanical polishing. Herein, a room temperature treatable, high-efficient and low-cost seedless TSV process was developed with a one-step filling process by using novel electrically conductive adhesives (ECAs) filled with silver nanowires. The as-prepared ECAs could be fully cured at room temperature and exhibited excellent conductivity due to combining the benefits of both polymethyl methacrylate (PMMA) and silver nanowires. Complete filling of TSVs with the as-prepared 30 wt% silver nanowires ECAs was realized, and the resistivity of a fully filled TSV was as low as 10−3 Ω·cm. Furthermore, the application of such novel TSV filling process could also be extended to a wide range of different substrates, showing great potential in MEMS packaging, flexible microsystems and many other applications.

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Feasibility study of Cu paste printing technique to fill deep via holes for low cost 3D TSV applications

Cited by 2 publications

References 7 publications

Material innovation for MOL, BEOL, and 3D integration

Material innovation for MOL, BEOL, and 3D integration

A Novel Seedless TSV Process Based on Room Temperature Curing Silver Nanowires ECAs for MEMS Packaging

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