Feasibility study of the synthesis of YBiO3 thin films by aqueous chemical solution deposition as an alternative for CeO2 buffer layers in coated conductors

Pollefeyt, Glenn; Rottiers, Sarah; Vermeir, Pieter; Lommens, Petra; Hühne, Ruben; Buysser, Klaartje De; Driessche, Isabel Van

doi:10.1039/c3ta00826f

Cited by 17 publications

(19 citation statements)

References 24 publications

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“…9,10 Based on first-principles calculations 11,12 and preliminary growth studies, 13 YBiO 3 (YBO) appears to be of particular interest in the search for new topological materials. Although YBO thin films have been grown by chemical solution deposition, 14,15 so far very few successful attempts to grow single-crystalline films with PLD have been made, as concluded from the lack of publications. A first difficulty for growing YBO via PLD may be related to an unfavorable ratio of the ionic radii of the cations, which can prevent the growth of bulk and single-crystalline films.…”

Section: All Article Content Except Where Otherwise Noted Is Licensmentioning

confidence: 99%

Laser-induced fluorescence analysis of plasmas for epitaxial growth of YBiO3 films with pulsed laser deposition

et al. 2016

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We record the two-dimensional laser-induced fluorescence (LIF) on multiple plasma constituents in a YBiO3 plasma. This allows us to directly link the influence of oxygen present in the background gas during pulsed laser deposition to the oxidation of plasma species as well as the formation of epitaxial YBiO3 films. With spatiotemporal LIF mapping of the plasma species (Y, YO, Bi, and BiO) in different background gas compositions, we find that little direct chemical interaction takes place between the plasma plume constituents and the background gas. However, a strong influence of the background gas composition can be seen on the YBO film growth, as well as a strong correlation between the oxygen fraction in the background gas and the amount of YO in the plasma plume. We assign this correlation to a direct interaction between the background gas and the target in between ablation pulses. In an O2 background, an oxygen-rich surface layer forms in between ablation pulses, which provides additional oxygen for the plasma plume during target ablation. This differs from our previous observations in STO and LAO plasmas, where species oxidation primarily takes place during propagation of the plasma plume towards the substrate.

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Section: All Article Content Except Where Otherwise Noted Is Licensmentioning

confidence: 99%

Laser-induced fluorescence analysis of plasmas for epitaxial growth of YBiO3 films with pulsed laser deposition

et al. 2016

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“…Particularly promising, based on first principles calculations, is YBiO 3 . [72] Although YBiO 3 thin films have been grown by chemical solution deposition, [73] little is reported on the thin film growth of YBiO 3 single-crystalline films using PLD. The volatility of bismuth challenges the stoichiometric growth of YBiO 3 , especially at high temperatures typically used in PLD growth.…”

Section: Introductionmentioning

confidence: 99%

Stoichiometry control in oxide thin films by pulsed laser deposition

Groenen

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Cover image: Reflection High Energy Electron Diffraction patterns of SrTiO 3 thin films on SrTiO 3 substrates grown with pulsed laser deposition at various partial oxygen background gas pressure conditions. The colorscale and the level of detail of the image are manipulated.The research described in this thesis was carried out within the Inorganic Materials Science group, Department of Science and Technology and the MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands. This research is supported by the Dutch Technology Foundation STW, which is part of the Netherlands Organization for Scientific Research (NWO) and partly funded by the Ministry of Economic Affairs (project number 10760). Chapter 1 Stoichiometry control in oxide thin films IntroductionIn 1959 Richard Feynman for the first time discussed the synthesis of materials via manipulation of single atoms in his famous talk 'There's Plenty of Room at the Bottom'. 1 Since then, the advances and achievements in the field of nanotechnology have lead to functionalised materials, devices and technology with increasingly smaller integrated circuits and denser data storage. The term nanotechnology itself was first used by Norio Taniguchi, professor of Tokyo University of Science in 1974, to describe processes such as thin film deposition exhibiting control on the order of a nanometer. [1] His definition of nanotechnology, Nano-technology mainly consists of the processing of separation, consolidation, and deformation of materials by one atom or one molecule, still stands today and romantically summarises the essence of materials science and engineering at nanoscale dimensions. Advances in fabrication processes and characterisation techniques have made it possible to synthesise, characterise and manipulate material at the atomic scale. At these dimensions, quantum effects dominate the properties of materials such that intrinsic material bulk properties are altered or lost and new phenomena and properties can emerge. This creates new pathways and possibilities for new applications. A good example is the giant magnetoresistance effect, widely applied in magnetic field sensors in hard disk drives and all sorts of sensors. A highly interesting class of materials are complex metal oxides, for their rich variety of interesting physical properties such as ferroelectricity, ferromagnetism and superconductivity. A widely investigated sub-group within the complex metal oxides are the perovskite metal oxides. The term 'perovskite' originates from the discovery of the calcium titanium oxide (CaTiO 3 ) mineral in 1839, but is nowadays used to describe the family of crystals with an ABO 3 stoichiometry. The unit cell of perovskites has rare-earth or metal A and B cations and six oxygen atoms, forming a BO 6 oxygen octahedra in the centre of the cubic with the A cation in its corners.The properties of (perovskite) complex metal oxides are highly sensitive to slight deviation from the ideal crystal stoichiometry. Therefore, a gen...

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“…At x = 0.5, Y x Bi 1−x O 1.5 (YBiO 3 ) has a cubic lattice constant a = 5.4188Å, 10 and its pseudocubic primitive cell with a/ √ 2 is closely matched to LaAlO 3 , SrTiO 3 , (LaAlO 3 ) 0 .3(Sr 2 TaAlO 6 ) 0 .7 (LSAT) and also YBa 2 Cu 3 O 7−δ . Heteroepitaxial YBiO 3 (100) thin films have hence been prepared as buffer layers a) Corresponding Author: marcus.jenderka@physik.uni-leipzig.de b) http://research.uni-leipzig.de/hlp/ on LaAlO 3 (001), SrTiO 3 (001) and LSAT(001) singlecrystalline substrates by chemical solution [1][2][3] and pulsed laser deposition. 4,11 Their surface-morphology is characterized by crystalline grains of around 50 nm and root-mean-squared (RMS) surface roughnesses between 2.6 to 1.8 nm at a film thickness of 140 and 40 nm, respectively.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4] Recently, first-principles electronic band structure calculations proposed YBiO 3 as a novel oxide topological insulator:…”

Section: Introductionmentioning

confidence: 99%

Fundamental absorption edges in heteroepitaxial YBiO3 thin films

Jenderka

Richter

Lorenz

et al. 2016

Journal of Applied Physics

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The dielectric function of heteroepitaxial YBiO 3 grown on a-Al 2 O 3 single crystals via pulsed laser deposition is determined in the spectral range from 0.03 eV to 4.5 eV by simultaneous modeling of spectroscopic ellipsometry and optical transmission data of YBiO 3 films of different thickness. The (111)-oriented YBiO 3 films are nominally unstrained and crystallize in a defective fluorite-type structure with F m3m space group. From the calculated absorption spectrum, a direct electronic bandgap energy of 3.6(1) eV and the signature of an indirect electronic transition around 0.5 eV are obtained. These values provide necessary experimental feedback to previous conflicting electronic band structure calculations predicting either a topologically trivial or non-trivial insulating ground state in YBiO 3 .

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Feasibility study of the synthesis of YBiO3 thin films by aqueous chemical solution deposition as an alternative for CeO2 buffer layers in coated conductors

Cited by 17 publications

References 24 publications

Laser-induced fluorescence analysis of plasmas for epitaxial growth of YBiO3 films with pulsed laser deposition

Laser-induced fluorescence analysis of plasmas for epitaxial growth of YBiO3 films with pulsed laser deposition

Stoichiometry control in oxide thin films by pulsed laser deposition

Fundamental absorption edges in heteroepitaxial YBiO3 thin films

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