FeIn₂S₄ Nanocrystals: A Ternary Metal Chalcogenide Material for Ambipolar Field‐Effect Transistors

Abstract

An ambipolar channel layer material is required to realize the potential benefits of ambipolar complementary metal–oxide–semiconductor field‐effect transistors, namely their compact and efficient nature, reduced reverse power dissipation, and possible applicability to highly integrated circuits. Here, a ternary metal chalcogenide nanocrystal material, FeIn2S4, is introduced as a solution‐processable ambipolar channel material for field‐effect transistors (FETs). The highest occupied molecular orbital and the lowest unoccupied molecular orbital of the FeIn2S4 nanocrystals are determined to be −5.2 and −3.75 eV, respectively, based upon cyclic voltammetry, X‐ray photoelectron spectroscopy, and diffraction reflectance spectroscopy analyses. An ambipolar FeIn2S4 FET is successfully fabricated with Au electrodes (E F = −5.1 eV), showing both electron mobility (14.96 cm2 V−1 s−1) and hole mobility (9.15 cm2 V−1 s−1) in a single channel layer, with an on/off current ratio of 105. This suggests that FeIn2S4 nanocrystals may be a promising alternative semiconducting material for next‐generation integrated circuit development.

The Constructions and Pyrolysis of 3D Kerogen Macromolecular Models: Experiments and Simulations

“…The XPS spectra were divided into several fitting peaks to calculate the relative contents of chemical states, because there are one more chemical states of these elements . The fitting peaks filled by different colors correspond to different chemical states of elements which are shown in Figure and Table 2 .…”

“…Subsequently, the peak positions and corresponding fractions of areas of each fitting peak were calculated to obtain the relative abundances of different chemical states of each element. The main chemical states and their relative contents of C, O, nitrogen (N), and sulfur (S) are listed in Table . The Erdos kerogen contains more aromatic groups than Songliao kerogen, which will be compared to the result of 13 C NMR later.…”

Электропроводность FeGaInSe-=SUB=-4-=/SUB=- на переменном токе

“…В настоящее время тройные халькогенидные соединения привлекают все больший интерес в связи с тем, что они обладают комплексом исключительно важных свойств и находят широкое применение в различных областях новой техники. В этом плане вызывает интерес группа тройных соединений А II В III 2 Х VI 4 (А -Mn, Fe, Co, Ni; B -Ga, In; X -S, Se, Te) [1][2][3][4][5][6][7][8][9][10][11][12]. Эти соединения перспективны для создания на их основе лазеров, модуляторов света, фотодетекторов и других функциональных устройств, управляемых магнитным полем.…”

“…Эти соединения перспективны для создания на их основе лазеров, модуляторов света, фотодетекторов и других функциональных устройств, управляемых магнитным полем. На основе этих материалов созданы фоточувствительные структуры [7-9], на основе кристаллов FeIn 2 Se 4 получены гетеропереходы [10], соединениe FeIn 2 S 4 синтезированo в виде нанокристаллов [11].…”

FeS–FeGaInS4–FeIn2S4 SYSTEM

“…These compounds are characterized by the phenomenon of magnetism with electronic or optical control. Therefore, they are very promising for the manufacture of optical emitters, photodetectors, switches and light modulators as well as spintronic and other functional devices controlled by a magnetic field [1][2][3][4][5][6][7][8]. It is known that the development of a new scientific fieldspintronics is associated with the possibility of transferring the oriented electron spin from a ferromagnet to a semiconductor.…”