2013 Ieee Sensors 2013
DOI: 10.1109/icsens.2013.6688205
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Femto-molar sensitive field effect transistor biosensors based on silicon nanowires and antibodies

Abstract: Abstract-This article presents electrically-based sensors made of high quality silicon nanowire field effect transistors (SiNWFETs) for high sensitive detection of vascular endothelial growth factor (VEGF) molecules. SiNW-FET devices, fabricated through an IC/CMOS compatible top-down approach, are covalently functionalized with VEGF monoclonal antibodies in order to sense VEGF. Increasing concentrations of VEGF in the femto molar range determine increasing conductance values as proof of occurring immuno-reacti… Show more

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Cited by 30 publications
(19 citation statements)
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“…6), thus confirming the detection of occurring immuno-recognition events between antibody and antigen molecules. An according shift of the threshold voltage (V th ) was also observed in the I ds -V bg curves [14]. The results confirm data in literature about the possibility of sensing pathogenic factors with SiNW-FET sensors.…”
Section: Sensing Of Cancer Biomarkers In Ideal Conditionssupporting
confidence: 78%
“…6), thus confirming the detection of occurring immuno-recognition events between antibody and antigen molecules. An according shift of the threshold voltage (V th ) was also observed in the I ds -V bg curves [14]. The results confirm data in literature about the possibility of sensing pathogenic factors with SiNW-FET sensors.…”
Section: Sensing Of Cancer Biomarkers In Ideal Conditionssupporting
confidence: 78%
“…e l s e v i e r . c o m / l o c a t e / s u s c measurements [29]. In particular, we believe that the detection of hydrogen ions of a salt solution deposited and dried onto the device occurs thanks to the formation of a liquid thin film on the sample surface by adsorption of water molecules from the surrounding environment to the native oxide of the nanowire.…”
Section: Contents Lists Available At Sciencedirectmentioning
confidence: 99%
“…Source to drain I ds -V ds characteristics were registered at a fixed back-gate potential V bg of 0 V. I ds -V ds curves were acquired in the linear scale by sweeping the source-to-drain potential from 0 to 5 V. This data was used to study the varying conductance [31], calculated as the slope of the curve, with varying pH. Current to voltage characteristics were also acquired in the logarithmic scale while double sweeping V ds was between −5 and +5 V. These second measurements enabled us to observe the changing hysteresis properties of the memristive sensors as a function of the ion concentration.…”
Section: Electrical Measurementsmentioning
confidence: 99%
“…Puppo et al got rid of the Debye screening problem by performing the electrical measurements on dried samples after the antigen-binding coupling [98]. The authors developed a SiNW-FET sensor for the detection of vascular endothelial growth factor (VEGF), a pathological angiogenesis factor.…”
Section: Trends In Fet-based Immunosensors Using Nanomaterials As Senmentioning
confidence: 99%