We studied the energy density and storage capacity properties of rare-earth modified lead zirconate titanate thin films. Highly oriented thin films of (PbZr0.53Ti0.47)(1−y)(LaxSc1−x)yO3 wherein; [for y = 0 and x =0 viz PL0] and, [for y = 0.1 and x = 0.2, 0.4, 0.6 and 0.8 viz PL2, PL4, PL6 and PL8 respectively] abbreviated as PL10x have synthesized on MgO (100) substrate by the pulsed laser deposition technique. The higher proportion of lanthanum increased the broadening of dielectric permittivity and dielectric maxima that shifted to higher temperatures with increasing frequency, signifying the relaxor-type behavior of these films. The value of the relaxation parameter varies from γ = 1.69 for PL6 and 1.95 for PL8 that was estimated from the linear fit of the modified Curie-Weiss law indicating the relaxor nature satisfying Vogel-Fulcher relation. Furthermore, we achieved enhanced spontaneous polarization of the fabricated thin films. Slim loop hysteresis was observed on tuning lanthanum and scandium and the estimated recovered energy density (Ure) is 51.15 J cm−3 and 26.54 J cm−3 with efficiency (η) of 47.38% and 65.88% respectively for PL6 and PL8 thin films. The high dielectric permittivity, high breakdown strength, and enhanced energy storage density of thin films could make it promising materials for memory, power electronics, and energy storage applications.