Ferroelectric Properties of (Na_0.5K_0.5)NbO₃–BaZrO₃–(Bi_0.5Li_0.5)TiO₃Thin Films Deposited on Pt/(001)MgO Substrate by Pulsed Laser Deposition

Abstract

TiO 3 (NKN-BZ-BLT) thin films with a thickness of about 2.0 mm were fabricated on a Pt/ (001)MgO substrate by pulsed laser deposition (PLD). The X-ray diffraction pattern (XRD) showed that the NKN-BZ-BLT thin films that were oriented in both the 001 pt and the 101 pt directions [determined by pseudo-tetragonal perovskite (pt)] were grown on the Pt/(001)MgO substrate. A rocking curve measurement revealed that the fluctuations of the crystalline orientation of the 001 pt -and 101 pt -oriented NKN-BZ-BLT grains are very small. The reciprocal space map and pole figure showed that the 001 pt -oriented NKN-BZ-BLT grains epitaxially grew on the Pt/(001)MgO substrate. On the other hand, the 010 pt axis (existing in the in-plane) of the 101 pt -oriented NKN-BZ-BLT grains rotated by 45 for the 100 axis (existing in the in-plane) of the (001)MgO substrate. The dielectric constant " r and the dielectric loss tan of the NKN-BZ-BLT thin films were 682 and 0.076 at 1 kHz, respectively. The P-E hysteresis loops of the NKN-BZ-BLT thin films showed clear ferroelectricity. The remanent polarization P r and coercive electric field E c were 24.5 mC/cm 2 and 29.3 kV/cm, respectively. The NKN-BZ-BLT thin films exhibited larger P r values than NKN-BZ-BLT ceramics. #

Fabrication of (K,Na)NbO<inf>3</inf> thin films on Si substrate by pulsed laser deposition

“…In addition, the introduction of buffer layers improved the ferroelectric properties. We reported that the introduction of the NN buffer layer decreased the leakage current and improved ferroelectric properties of the NKN-based films on Pt/MgO substrate [9]. In the present study, resistance for applied large electric field is decreased and P r value is considerably increased by introducing NN buffer layers.…”

“…We reported fabrication of NKN-based thin films with excellent ferroelectric properties on SrRuO 3 (SRO)/SrTiO 3 (STO) [6,7] and Pt/(001)MgO [8,9] substrates by pulsed laser deposition (PLD). We also reported the relationship between the orientation of NN thin films and electric (dielectric and ferroelectric) properties [10].…”

Structural and nanomechanical properties of sol–gel prepared (K, Na)NbO3 thin films

“…K 0.5 Na 0.5 NbO 3 (KNN), a combination of ferroelectrics KNbO 3 and anti‐ferroelectrics NaNbO 3 , has been reported to possess good piezoelectric properties (as it is near the morphotropic phase boundary) . The physical and chemical methods of perovskite KNN thin film preparation onto different substrates are known: magnetron sputtering, pulsed laser deposition (PLD) and chemical solution deposition (CSD), based on the sol–gel process …”

“…However, most of the studies reported to date have been focused on the electrical properties of sol–gel KNN thin films, and little attention has been devoted to the mechanical properties . It is, therefore, important to develop a basic understanding of the effects of microstructure on the mechanical properties (elastic modulus and hardness) of thin films.…”

Potassium‐Sodium‐Niobate‐Based Thin Films: Lead Free for Micro‐Piezoelectrics

“…In the Li + , Ta 5+ , and Sb 5+ co‐doped films, the ε r was enhanced to 1450 when deposition temperature increased to 750 o C . The grains of BaZrO 3 and (Bi 0.5 ,Li 0.5 )TiO 3 co‐doped KNN‐based films manifested two different orientations on the Pt/(001)MgO substrate as shown in Figure , and larger P r value (24.5 µC cm −2 ) was obtained than that of ceramic counterparts and the films on (111)Pt/Ti/SiO 2 /(100)Si substrate . Moreover, the effects of LaNiO 3 bottom buffer layer of this film were also analyzed, which lead to smaller P r value due to the reaction of Ni with Nb .…”