Ferromagnetic material CdGeP2:Mn for spintronics

Новоторцев, В. М.; Varnavskii, S. A.; Маренкин, С. Ф.; Koroleva, L. I.; Demin, R. V.; Трухан, В. М.; Klimonskii, S. O.; Kuznetsov, V. D.

doi:10.1134/s0036023606080018

Cited by 6 publications

(3 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The procedure of synthesis, as well as magnetization data at ambient pressure is presented elsewhere31. In this work, we focus on Mn concentration of x = 0.225, where the obtained T C was 332 K, to our knowledge the highest value for this compound20.…”

Section: Methodsmentioning

confidence: 99%

Pressure control of magnetic clusters in strongly inhomogeneous ferromagnetic chalcopyrites

Arslanov

Mollaev

Kamilov

et al. 2015

Sci Rep

View full text Add to dashboard Cite

Room-temperature ferromagnetism in Mn-doped chalcopyrites is a desire aspect when applying those materials to spin electronics. However, dominance of high Curie-temperatures due to cluster formation or inhomogeneities limited their consideration. Here we report how an external perturbation such as applied hydrostatic pressure in CdGeP2:Mn induces a two serial magnetic transitions from ferromagnet to non-magnet state at room temperature. This effect is related to the unconventional properties of created MnP magnetic clusters within the host material. Such behavior is also discussed in connection with ab initio density functional calculations, where the structural properties of MnP indicate magnetic transitions as function of pressure as observed experimentally. Our results point out new ways to obtain controlled response of embedded magnetic clusters.

show abstract

Section: Methodsmentioning

confidence: 99%

Pressure control of magnetic clusters in strongly inhomogeneous ferromagnetic chalcopyrites

Arslanov

Mollaev

Kamilov

et al. 2015

Sci Rep

View full text Add to dashboard Cite

show abstract

“…It has been shown comparatively recently that the highest Curie temperatures are offered by manganese doped II-IV-V 2 materials [2][3][4]. The highest Curie temperature so far (T C = 355 K) has been reached in CdGeAs 2 doped with 3 wt % Mn [5,6].…”

Section: Introductionmentioning

confidence: 99%

Electrical and magnetic properties of the diluted magnetic semiconductors Cd1 − x Mn x GeP2 and Cd1 − x Mn x GeAs2 at high pressures

et al. 2012

Self Cite

View full text Add to dashboard Cite

show abstract

“…Although high-quality growth of CdGeP 2 has been achieved [127] and this material is of interest for potential spintronics applications [128,129], this crystal has not become commercially…”

Section: Chalcopyrite Coherence Length Mappingmentioning

confidence: 99%

Chalcopyrite Semiconductors as Sources for Terahertz Spectroscopy

Rowley¹

View full text Add to dashboard Cite

This dissertation summarizes a first effort to address the suitability of chalcopyrite structured semiconductors for efficient and broadband terahertz (THz) pulse emission by optical rectification. The experiments demonstrate that ZnGeP 2 , a chalcopyrite semiconductor showing improved growth quality in recent decades [1,2], is a promising source for THz spectroscopy while also addressing general fundamental questions concerning the nonlinear generation process in chalcopyrite semiconductors. Beyond ZnGeP 2 , the potential of other chalcopyrite structured semiconductors for THz emission is examined in the context of calculated phase-matching characteristics, onset pump wavelength of multiphoton absorption, and tabulated second-order nonlinear coefficients. Based on these, CdGeP 2 is determined to show particular promise among semiconductors as a THz source when pumped at or near the fiber laser line of 1.55 μm. The orientation dependence of THz optical rectification efficiency is examined in tetragonal birefringent ZnGeP 2 , compared to that of cubic GaP, and modeled based on the second-order nonlinear tensor, while accounting for birefringence. These results demonstrate the significant effects of birefringence on THz emission efficiency while defining the most efficient orientations for generation and can be generalized to other chalcopyrite semiconductors; the general approach is applicable to other uniaxial birefringent crystals. Experimental mapping of generated THz pulses is presented over a broad pump tuning range (1120-2480 nm) in 3 mm thick ZnGeP 2 crystals. This mapping, for two distinct and efficient orientations, demonstrates the moderate angle tunability of phase mismatch achievable in chalcopyrite crystals; the data also continuously demonstrate the effects of phase mismatch on the temporal and spectral THz pulse waveform. Finally, pump-intensity dependence of emission is presented for three crystal lengths, showing the effects of near-infrared nonlinear optical absorption and THz free-carrier absorption. Measurements, modeling, and calculation of characteristic lengths provide insight into the upper limit of pulse intensity and crystal length for generation of intense terahertz pulses without detriment to the bandwidth. Direct comparison of generation efficiency from GaP and ZnGeP 2 is also measured for reference.

show abstract

Ferromagnetic material CdGeP2:Mn for spintronics

Cited by 6 publications

References 6 publications

Pressure control of magnetic clusters in strongly inhomogeneous ferromagnetic chalcopyrites

Pressure control of magnetic clusters in strongly inhomogeneous ferromagnetic chalcopyrites

Electrical and magnetic properties of the diluted magnetic semiconductors Cd1 − x Mn x GeP2 and Cd1 − x Mn x GeAs2 at high pressures

Chalcopyrite Semiconductors as Sources for Terahertz Spectroscopy

Contact Info

Product

Resources

About