Field-assisted diffusion of silver in SnO<sub>2</sub>thin films

Gharesi, Mohsen; Moalaghi, Maryam; Dehghani, Niloofar; Ansari, M. Shahnawaze

doi:10.1088/1742-6596/939/1/012007

Cited by 4 publications

(1 citation statement)

References 29 publications

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“…Considering the up todate studies, metal contacts on oxide materials appear to be attracting important and continuously increasing research attention. Various metals on various oxide materials have been assessed, and focused methods have been introduced aiming at both the development of reliable contacts [27] and an understanding of the formation mechanism [28,29]. Moreover, important advances in understanding the nature of metal/oxide (electrolyte) contacts are also being made in the field of RRAM cells, revealing the interesting nanobattery effect [30] and highlighting the role redox processes [31] of interfacial layers [32] and moisture [33].…”

Section: Introductionmentioning

confidence: 99%

Electrical characteristics of interfacial barriers at metal—TiO₂ contacts

Michalas

Khiat

Stathopoulos

et al. 2018

J. Phys. D: Appl. Phys.

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materials (paper, flexible); adequate device level mobility [2] that can be further optimised by engineering appropriate gate dielectrics; high transparency due to their wide band gap; the capacity for postfabrication tunable resistance (memristive effects) [3,4], and good chemical stability. These features have led to the use of MOs in a variety of applications ranging from resistive random access memories (RRAMs) [5,6] and thin film transistors (TFTs) [7,8] to oxidebased photovol taics [9] and sensors [10], introducing a new era for large area transparent/stretchable electronics [11,12] and neuromor phic systems [13,14]. It is also worth mentioning two very recently published perspective articles [15,16] AbstractThe electrical properties of thin TiO 2 films have recently been extensively exploited with the aim of enabling a variety of metaloxide electron devices: unipolar and bipolar semiconductor devices and/or memristors. In these efforts, investigations into the role of TiO 2 as active material were the main focus; however, electrode materials are equally important. In this work we address this point by presenting a systematic quantitative electrical characterization study on the interface characteristics of metalTiO 2 metal structures. Our study employs typical contact materials that are used both as top and bottom electrodes in a metalTiO 2 metal setting. This allows an investigation of the characteristics of the interfaces as well as holistically studying an electrode's influence on the opposite interface, referred to in this work as the top/bottom electrodes interrelationship. Our methodology comprises the recording of current-voltage (I-V) characteristics from a variety of solidstate prototypes in the temperature range of 300 K -350 K, and their analysis through appropriate modelling. Clear field and temperaturedependent signature plots were also obtained, so as to shine more light on the role of each material as top/bottom electrodes in metalTiO 2 metal configurations. Our results highlight that these are not conventional metal-semiconductor contacts, and that several parameters are involved in the formation of the interfacial barriers, such as the electrode's position (atop or below the film), the electronegativity, the interface states, and even the opposite interface electrode material. Overall, our study provides a useful database for selecting appropriate electrode materials in TiO 2 based devices, offering new insights into the role of electrodes in metaloxide electronics applications.

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Section: Introductionmentioning

confidence: 99%

Electrical characteristics of interfacial barriers at metal—TiO₂ contacts

Michalas

Khiat

Stathopoulos

et al. 2018

J. Phys. D: Appl. Phys.

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Influence of thermal annealing on the properties of evaporated Er-doped SnO2

Machado

Silva

Tabata

et al. 2019

Materials Research Bulletin

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Mesoporous Ultrathin SnO₂ Nanosheets in Situ Modified by Graphene Oxide for Extraordinary Formaldehyde Detection at Low Temperatures

Wang

Tian

et al. 2019

ACS Appl. Mater. Interfaces

100

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In this article, we demonstrated an extremely high-sensitivity formaldehyde (HCHO) gas sensor, where the graphene oxide (GO) in situ modified two-dimensional (2D) SnO2 nanosheets with in-plane mesopores were utilized as the sensing materials. The sensor response (R a/R g) was larger than 2000 toward 100 ppm HCHO at 60 °C. In addition, the selectivity for detecting HCHO was excellent against other interferences including ethanol, acetone, methanol, toluene, ammonia, water, etc. The outstanding sensing performance of 2D mesoporous GO/SnO2 nanosheets was attributed to the synergism of the sensitizer effect of GO, large surface areas of 2D nanostructure, suitable particle size, and abundant in-plane mesopores. The high sensitivity, high selectivity, and low working temperature of the sensor reported here endowed it a great potential in selective detection of HCHO. Meanwhile, the design and synthesis of GO/SnO2 nanocomposites will provide new paradigms in the future development of HCHO-sensitive materials.

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Field-assisted diffusion of silver in SnO₂thin films

Cited by 4 publications

References 29 publications

Electrical characteristics of interfacial barriers at metal—TiO₂ contacts

Electrical characteristics of interfacial barriers at metal—TiO₂ contacts

Influence of thermal annealing on the properties of evaporated Er-doped SnO2

Mesoporous Ultrathin SnO₂ Nanosheets in Situ Modified by Graphene Oxide for Extraordinary Formaldehyde Detection at Low Temperatures

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Field-assisted diffusion of silver in SnO2thin films

Cited by 4 publications

References 29 publications

Electrical characteristics of interfacial barriers at metal—TiO2 contacts

Electrical characteristics of interfacial barriers at metal—TiO2 contacts

Influence of thermal annealing on the properties of evaporated Er-doped SnO2

Mesoporous Ultrathin SnO2 Nanosheets in Situ Modified by Graphene Oxide for Extraordinary Formaldehyde Detection at Low Temperatures

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Product

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Field-assisted diffusion of silver in SnO₂thin films

Electrical characteristics of interfacial barriers at metal—TiO₂ contacts

Electrical characteristics of interfacial barriers at metal—TiO₂ contacts

Mesoporous Ultrathin SnO₂ Nanosheets in Situ Modified by Graphene Oxide for Extraordinary Formaldehyde Detection at Low Temperatures