Field-dependant hopping conduction in silicon nanocrystal films

Rafiq, M. A.; Durrani, Z. A. K.; Mizuta, Hiroshi; Hassan, Mohamed; Oda, Shunri

doi:10.1063/1.3050332

Cited by 12 publications

(9 citation statements)

References 18 publications

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“…Fowler-Nordheim tunneling, space-charge-limited current (SCLC), , and Poole-Frenkel transport mechanisms have been observed for porous Si samples, whereas hopping conduction has been reported for films of amorphous SiO 2 containing Si-NCs . For Si-NC films composed of freestanding nanoparticles deposited directly from their synthesis reactors, SCLC, , Fowler-Nordheim tunneling, and hopping − mechanisms have been considered to describe charge transport data. SCLC may occur when uncompensated charge carriers are injected into a material.…”

Section: Experimental Data and Discussionmentioning

confidence: 99%

“…The latter aspect has been addressed in studies of the conductivity of thin films composed of SiO 2 -embedded Si-NCs as a function of Si-NC density, , where an abrupt increase in the conductivity has been observed for densities above a certain critical threshold, at which a percolating cluster of touching Si-NCs is formed. Studies on charge transport across Si-NCs embedded in SiO 2 , ,, porous Si, ,− and Si nanoparticle films directly deposited from nanoparticle synthesis reactors ,,− have been reported, where Fowler-Nordheim tunneling, , space-charge-limited current, ,,, Poole-Frenkel, and hopping − transport mechanisms were identified.…”

Section: Introductionmentioning

confidence: 99%

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Solution-Processed Networks of Silicon Nanocrystals: The Role of Internanocrystal Medium on Semiconducting Behavior

et al. 2011

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We have produced networks of surface-oxidized and hydrogen-terminated silicon nanocrystals (Si-NCs), both intrinsic and n-type doped, on flexible plastic foil from nanoparticle inks. The charge transport in these networks was comprehensively studied by means of time-dependent conductivity, steady-state current versus voltage characteristics, and steady-state photocurrent measurements as a function of incident light intensity. These measurements were complemented by surface chemistry and structural/morphological analysis from Fourier transform infrared spectroscopy and electron microscopy. Whereas H-terminated Si-NC networks function as semiconductors (both in air and in vacuum), where conductivity enhancement upon impurity doping and photoconductivity were observed, these characteristics are not present in networks of surface-oxidized Si-NCs. For both network types, the observation of a power law behavior for steady-state current versus voltage and a current decaying with time at constant bias indicate that charge transport is controlled by space-charge-limited current (involving trap states) via percolation paths through the networks. We have also monitored the evolution of the networks (photo)conductivity when the internanocrystal separating medium formed by Si–H bonds is progressively replaced by a native oxide upon exposure to air. Although a decrease in the (photo)conductivity is observed, the networks still behave as semiconductors even after a long-term air exposure. From an analysis of all (photo)current data, we deduce that in networks of oxidized Si-NCs inter-NC charge transfer requires the participation of oxide-related electronic states, whereas in H-terminated Si-NC networks direct inter-NC charge transfer plays a major role in the overall long-range conduction process.

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Section: Experimental Data and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Solution-Processed Networks of Silicon Nanocrystals: The Role of Internanocrystal Medium on Semiconducting Behavior

et al. 2011

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“…This is because carrier jumps to higher energy localized states facilitated by phonons or applied electric field. 39 As shown in Figures 5(a) and 5(b) below $170 K, the data obey Mott's 3D VRH given by 38 Here, T 0 is the characteristic temperature and depends on density of states (N(E F )) and localization length (n) and is given by…”

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confidence: 92%

Charge injection and trapping in TiO2 nanoparticles decorated silicon nanowires arrays

Rasool

Rafiq

Ahmad

et al. 2015

Applied Physics Letters

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We investigate carrier transport properties of silicon nanowire (SiNW) arrays decorated with TiO2 nanoparticles (NPs). Ohmic conduction was dominant at lower voltages and space charge limited current with and without traps was observed at higher voltages. Mott’s 3D variable range hoping mechanism was found to be dominant at lower temperatures. The minimum hopping distance (Rmin) for n and p-SiNWs/TiO2 NPs devices was 1.5 nm and 0.68 nm, respectively, at 77 K. The decrease in the value of Rmin can be attributed to higher carrier mobility in p-SiNWs/TiO2 NPs than that of n-SiNWs/TiO2 NPs hybrid device

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“…7 In addition, investigation of the hopping conduction in SiNCs also attracts much interest. 8,9 In a previous work, 9 we discussed low-field carrier transport in SiNC films in terms of the size effects on hopping conduction. However, by taking into account the fact that light emitting devices and electron emitters are operated at high fields, an understanding of high field transport through SiNCs is essential.…”

Section: Introductionmentioning

confidence: 99%

Carrier transport by field enhanced thermal detrapping in Si nanocrystals thin films

Zhou

Uchida

Mizuta

et al. 2009

Journal of Applied Physics

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Postdeposition thermal annealing and material stability of 75 °C hydrogenated nanocrystalline silicon plasmaenhanced chemical vapor deposition films J. Appl. Phys. 98, 034305 (2005); 10.1063/1.1993777 Schottky junction properties on high quality boron-doped homoepitaxial diamond thin filmsThe carrier transport at high voltage region in Si nanocrystal ͑SiNC͒ thin films has been investigated. The current-voltage measurements demonstrate that at high voltage region, conductance exponentially depends on V 1/2 . The activation energy, measured from the temperature dependence of the current-voltage ͑I-V͒ characteristics, decreases with an increase in the applied voltage. These results indicate that field enhanced detrapping dominates transport mechanism in the SiNC films at high voltage region. The possible influence of metal/semiconductor contacts on V 1/2 dependence has been excluded through the activation energy measurement on different work-function metals as electrodes. The position of the traps contributing to the detrapping processes is concluded to be at interfaces of SiNC/ SiO 2 since H 2 annealing drastically decreases the activation energy. The reasons why experimental results demonstrate no accordance with the material parameter V ‫ء‬ of Poole-Frenkel expression have been discussed based on nanostructure characteristics of SiNC film.

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Field-dependant hopping conduction in silicon nanocrystal films

Cited by 12 publications

References 18 publications

Solution-Processed Networks of Silicon Nanocrystals: The Role of Internanocrystal Medium on Semiconducting Behavior

Solution-Processed Networks of Silicon Nanocrystals: The Role of Internanocrystal Medium on Semiconducting Behavior

Charge injection and trapping in TiO2 nanoparticles decorated silicon nanowires arrays

Carrier transport by field enhanced thermal detrapping in Si nanocrystals thin films

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