2015
DOI: 10.1088/0953-8984/27/28/286002
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Field effects on spontaneous magnetization reversal of bulk BiFe0.5Mn0.5O3, an effective strategy for the study of magnetic disordered systems

Abstract: We report a comprehensive study of the spontaneous magnetization reversal (MRV) performed on the disordered polycrystalline perovskite BiFe(0.5)Mn(0.5)O(3), an intriguing compound synthesized in high pressure-high temperature conditions. In disordered systems, the origin of MRV is not completely clarified, yet. In BiFe(0.5)Mn(0.5)O(3), compositional disorder involves the ions on the B-site of the perovskite determining the presence of mesoscopic clusters, characterized by high concentrations of iron or mangane… Show more

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Cited by 6 publications
(15 citation statements)
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“…The adjacent Mn-O and Fe-O sublattices distorting leads to the canting angle of Fe-O-Mn. It has been reported [21,22,24,37] that the spin canting would originate from the D-M interaction, which is directly coupled to the tilting of the adjacent Fe-O and Mn-O octahedral. And it can account for the occurrence of the FM phase in some multiferroic perovskites.…”
Section: The Competition Between Antisymmetric D-m Interactions and S...mentioning
confidence: 99%
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“…The adjacent Mn-O and Fe-O sublattices distorting leads to the canting angle of Fe-O-Mn. It has been reported [21,22,24,37] that the spin canting would originate from the D-M interaction, which is directly coupled to the tilting of the adjacent Fe-O and Mn-O octahedral. And it can account for the occurrence of the FM phase in some multiferroic perovskites.…”
Section: The Competition Between Antisymmetric D-m Interactions and S...mentioning
confidence: 99%
“…Bi 2 FeMnO 6 ceramics synthesized at high pressure are the former series of materials. [21,36,37] It is possible to switch the two magnetized states by varying the magnetic field without relaxation and attenuation. This unusual magnetization reversal behavior allows such materials to be used in the preparation of magnetic memory or magnetic switching devices.…”
Section: Introductionmentioning
confidence: 99%
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“…In cases when the required pressure is abovẽ 8 GPa, the obtained amounts are hardly enough, even for the crystal structure characterization. The cases when researchers managed to measure dielectric properties of the high-pressure synthesized ceramics are rather rare [3][4][5][6][7].…”
Section: Introductionmentioning
confidence: 99%