Field Emission from a P-Type Silicon Single Emitter Sharpened by Focused Ion Beam Milling

Abstract

The field emission properties of a p-type Si single emitter that was sharpened by focused ion beam (FIB) milling were investigated. Typical nonlinear Fowler–Nordheim (FN) plots commonly observed in a p-type Si emitter were maintained in a Ga+ ion FIB-milled emitter. The emitter sharpened by FIB milling exhibited a low turn-on voltage. Excellent stability of the emission current was obtained from the FIB-milled emitter.