Field-enhanced conductivity effects in thin chalcogenide-glass switches

The ac conductivity and dielectric properties of Ge 15 Se 60 X 25 (X = As or Sn) thin films are reported in this paper. The thin films were deposited by thermal evaporation at 10 −5 Torr pressure. The films were well characterized by X-ray diffraction, differential thermal analysis and energy dispersive X-ray spectroscopy. The ac conductivity was measured over temperature range 303-413 K and frequency range 10 2 -10 5 Hz. The frequency dependence of the ac conductivity was found to be linear with slope which lies very close to unity and is independent of temperature. This behavior can be explained in terms of the correlated barrier hopping between centers forming intimate valence alternation pairs. Values of the dielectric constant ε 1 were found to decrease with frequency and increase with temperature. The maximum barrier height W m for each sample, which was calculated from the dielectric measurements according to the Guinitin equation, agrees with the theory of hopping of charge carriers over potential barrier as suggested by Elliott in case of chalcogenide glasses. The density of localized state near the Fermi level was estimated for the studied films.

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“…Different models [14][15][16][17][18] have been proposed to interpret the mechanism of ac conduction.…”

Section: Introductionmentioning

confidence: 99%

Ac Conductivity and Dielectric Properties of Amorphous Ge₁₅Se₆₀X₂₅( X = As or Sn) Films

et al. 2011

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“…Thermally initiated switching is based on thermal activation of charge carriers upon increase in the temperature as a result of increased conductivity due to Joule heating. Some of the models based on thermally initiated switching are given by Warren and Male, [ 55 ] Chen and Wang, [ 56 ] and so on. On the other hand, electronic effects may occur due to response of charge carriers in presence of the electric field.…”

Section: Physical Mechanism Of Tsmentioning

confidence: 99%

Ultrafast Threshold Switching Dynamics in Phase‐Change Materials

Saxena

Manivannan

2022

Physica Rapid Research Ltrs

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Discovery of electrical switching in chalcogenide glasses by S.R. Ovshinsky paves a new path for developing high‐speed nonvolatile electronic memory and high‐performance computing solutions. This article presents a review on the systematic understanding of threshold switching (TS) properties in various chalcogenide materials, Ovonic threshold switching (OTS) and Ovonic memory switching (OMS), the nature of TS, voltage‐dependent transient characteristics, and the role of TS in governing the programming speed based on research efforts over the last six decades. Furthermore, realization of TS in picosecond timescale, the commonalities between OTS and OMS, and the possible underlying mechanism has been explored. Furthermore, a scheme of material classification based on TS dynamics for ultrafast yet energy‐efficient programming has been proposed for phase‐change memory with SRAM‐like programming speed for future electronics.

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“…This glass system abounds with information about most of its physical properties (11,12,15,22,26,29,30,31).…”

Section: Methods Of Attackmentioning

confidence: 99%

“…Warren and Male (31) have shown that as the temperature is increased the critical field required for switching de creases. For the 4 micron diameter memory cell the relative critical field curve that corresponds to this will be midway between two of their curves.…”

Section: The Secondary Electron Emission Curves Are Shown In Figures 14mentioning

confidence: 99%

Secondary emission of chalcogenide glasses

Doctor

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Field-enhanced conductivity effects in thin chalcogenide-glass switches

Cited by 44 publications

References 12 publications

Ac Conductivity and Dielectric Properties of Amorphous Ge₁₅Se₆₀X₂₅( X = As or Sn) Films

Ac Conductivity and Dielectric Properties of Amorphous Ge₁₅Se₆₀X₂₅( X = As or Sn) Films

Ultrafast Threshold Switching Dynamics in Phase‐Change Materials

Secondary emission of chalcogenide glasses

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Field-enhanced conductivity effects in thin chalcogenide-glass switches

Cited by 44 publications

References 12 publications

Ac Conductivity and Dielectric Properties of Amorphous Ge15Se60X25( X = As or Sn) Films

Ac Conductivity and Dielectric Properties of Amorphous Ge15Se60X25( X = As or Sn) Films

Ultrafast Threshold Switching Dynamics in Phase‐Change Materials

Secondary emission of chalcogenide glasses

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Product

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Ac Conductivity and Dielectric Properties of Amorphous Ge₁₅Se₆₀X₂₅( X = As or Sn) Films

Ac Conductivity and Dielectric Properties of Amorphous Ge₁₅Se₆₀X₂₅( X = As or Sn) Films